The electronic structure of Cu(In1−xGax)Se2 alloyed with silver

Erslev, Peter T.; Lee, JinWoo; Hanket, Gregory M.; Shafarman, William N.; Cohen, J. David

doi:10.1016/j.tsf.2011.01.368

Cited by 81 publications

(73 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…There are several possibilities for this difference between ACTS and CTS. First, adding a new element, in this case silver, may add an interface defect; this was also found for the ACIGS/CdS interface [21]. Second, KCN etching has been shown to affect the surface band gap, leading to changes in recombination [38].…”

Section: Devicesmentioning

confidence: 91%

“…Another possible reason for the reduced V oc could be changes at the CdS/ACTS interface. For ACIGS, it was found earlier that the defect concentration is increased at the CIGS/CdS interface, which could be reduced by light soaking (LS) [21]. To check whether the diode of our ACTS cells shows the same trend under LS as for ACIGS/CdS, dark curves were measured before and after 1 h of LS.…”

Section: Devicesmentioning

confidence: 99%

“…Alloying chalcopyrite materials with Ag has been shown to have several advantageous properties for kesterite and Cu(In,Ga)S 2 (CIGS) absorbers [19]- [26] [(Ag, Cu) 2 ZnSnS 4 (ACZTS) and (Ag,Cu)(In,Ga)S 2 (ACIGS)]. Ag replaces Cu in these materials, which increases the band gap [19], [23], [24], [26], decreases the p-type doping [23], as well as reduces intragrain defects and defect states [19]- [21], [23], [26]. All these effects may be beneficial for CTS as well.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Silver-Doped Cu₂SnS₃Absorber Layers for Solar Cells Application

Wild

Babbe

Robert

et al. 2018

IEEE J. Photovoltaics

View full text Add to dashboard Cite

Abstract-The p-type semiconductor Cu 2 SnS 3 is alloyed with Ag to investigate its effect on absorber layer and solar cell properties. Ag replaces the Cu in (Cu 1-x Ag x ) 2 SnS 3 (ACTS) up to x ࣘ 6% at 550°C. Above this percentage, Ag forms secondary phases. We find a significant increase in grain size, from hundreds of nanometers to several microns, and increased photoluminescence yield with increasing Ag concentration. Low-temperature photoluminescence measurements show that compensation is increased for the ACTS absorber layers, which could be beneficial for CTS, but also that the electrostatic band gap fluctuations are increased. The external quantum efficiency of the solar cells made from ACTS shows an increased carrier collection length from 320 nm for CTS to 700 nm and a thicker buffer layer. We attribute the increase in collection length to both increased depletion width (increased compensation) and diffusion length (

show abstract

Section: Devicesmentioning

confidence: 91%

Section: Devicesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Silver-Doped Cu₂SnS₃Absorber Layers for Solar Cells Application

Wild

Babbe

Robert

et al. 2018

IEEE J. Photovoltaics

View full text Add to dashboard Cite

show abstract

“…Ag incorporation was also reduced the structure disorder in the absorber since the melting points of Ag-chalcopyrites are ~200 ºC lower than their Cu analogues [19][20][21]. In the CZTS system, Ag 2 ZnSnS 4 and (Ag,Cu) 2 ZnSnS 4 (ACZTS) have shown much better photocatalysts activity for H 2 evolution than CZTS [22,23].…”

Section: Introductionmentioning

confidence: 99%

The role of Ag in (Ag,Cu)2ZnSnS4 thin film for solar cell application

Cui

Huang

et al. 2015

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…Lower melting temperature than its counterpart Cu(In,Ga)Se 2 (CIGS) may produce (Ag,Cu)(In,Ga)Se 2 (ACIGS) absorbers with lower defect densities [2] and provide a potential pathway to absorber materials for wide-bandgap solar cells with high performance. Three-stage coevaporation [3] has been adopted for wide-bandgap ACIGS deposition and has achieved higher open-circuit voltage (V oc ) while maintaining reasonable short-circuit current (J sc ) and fill factor (FF) [4], [5].…”

Section: Introductionmentioning

confidence: 99%

The Comparison of (Ag,Cu)(In,Ga)Se$_{\bf 2}$ and Cu(In,Ga)Se$_{\bf 2}$ Thin Films Deposited by Three-Stage Coevaporation

Chen

Lee

Shafarman

2014

IEEE J. Photovoltaics

Self Cite

View full text Add to dashboard Cite

Ag,Cu)(In,Ga)Se 2 and Cu(In,Ga)Se 2 thin-films with bandgap ∼1.35 eV were deposited by a three-stage elemental coevaporation process. The depositions were conducted at substrate temperatures of 580 • C and 650 • C to understand the effects of Ag alloying and high growth temperature on material properties. Ag/(Ag+Cu) and Ga/(In+Ga) gradients were observed and were reduced with higher growth temperature. Grain size was quantified and found to be enhanced by Ag and high growth temperature, while film texture showed no significant change with different deposition conditions.

show abstract

The electronic structure of Cu(In1−xGax)Se2 alloyed with silver

Cited by 81 publications

References 11 publications

Silver-Doped Cu₂SnS₃Absorber Layers for Solar Cells Application

Silver-Doped Cu₂SnS₃Absorber Layers for Solar Cells Application

The role of Ag in (Ag,Cu)2ZnSnS4 thin film for solar cell application

The Comparison of (Ag,Cu)(In,Ga)Se$_{\bf 2}$ and Cu(In,Ga)Se$_{\bf 2}$ Thin Films Deposited by Three-Stage Coevaporation

Contact Info

Product

Resources

About

The electronic structure of Cu(In1−xGax)Se2 alloyed with silver

Cited by 81 publications

References 11 publications

Silver-Doped Cu2SnS3Absorber Layers for Solar Cells Application

Silver-Doped Cu2SnS3Absorber Layers for Solar Cells Application

The role of Ag in (Ag,Cu)2ZnSnS4 thin film for solar cell application

The Comparison of (Ag,Cu)(In,Ga)Se$_{\bf 2}$ and Cu(In,Ga)Se$_{\bf 2}$ Thin Films Deposited by Three-Stage Coevaporation

Contact Info

Product

Resources

About

Silver-Doped Cu₂SnS₃Absorber Layers for Solar Cells Application

Silver-Doped Cu₂SnS₃Absorber Layers for Solar Cells Application