The end of the road for silicon?

Schulz, M.

doi:10.1038/21526

Cited by 309 publications

(151 citation statements)

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“…The reasons are various, including the fact that the relative amount of surface states -destructive for electronic transport properties -increases rapidly in 2-and 3-dimensional systems when their sizes are being reduced. Likewise, it is predicted that the SiO 2 layer in the MOSFET will be too thin soon (within 10 years or so) to retain its insulating properties [2]. So, there is much interest of physicists, technologists and engineers in new generation nano-scale devices, including molecular ones.…”

mentioning

confidence: 99%

Spin‐polarized transport through carbon nanotubes

Krompiewski

2005

Physica Status Solidi (b)

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Published online zzz PACS 85.35. Kt, 81.07.De, Carbon nanotubes (CNT) belong to the most promising new materials which can in the near future revolutionize the conventional electronics. When sandwiched between ferromagnetic electrodes, the CNT behaves like a spacer in conventional spin-valves, leading quite often to a considerable giant magneto-resistance effect (GMR). This paper is devoted to reviewing some topics related to electron correlations in CNT. The main attention however is directed to the following effects essential for electron transport through nanotubes: (i) nanotube/electrode coupling and (ii) inter-tube interactions. It is shown that these effects may account for some recent experimental reports on GMR, including those on negative (inverse) GMR.Copyright line will be provided by the publisher 1 Introduction A particularly challenging class of materials for the future electronics are carbon nanotubes, i.e. graphite sheets rolled up in such a manner that they form very long and thin (in atomic scale) cylinders. Their length can be of the order of several micrometers whereas typical cross-sections of single wall carbon nanotubes (SWCNT) are a few nanometers in diameter, and roughly up to 10 times more for multi-wall carbon nanotubes (MWCNT) . Both the SWCNTs and MWCNTs have been attracting much attention of many researchers since they were discovered [1].It is now clear that the electronics based on conventional semiconducting devices (e.g. silicon technology) has faced fundamental limitations as far as further miniaturization is concerned. The reasons are various, including the fact that the relative amount of surface states -destructive for electronic transport properties -increases rapidly in 2-and 3-dimensional systems when their sizes are being reduced. Likewise, it is predicted that the SiO 2 layer in the MOSFET will be too thin soon (within 10 years or so) to retain its insulating properties [2]. So, there is much interest of physicists, technologists and engineers in new generation nano-scale devices, including molecular ones. The adopted approach is the so-called bottom up philosophy, aiming at designing electronic devices at the molecular level. In contrast to siliconbased devices, the molecular ones (incl. carbon nanotubes, CNT) can successfully cope with the more and more demanding miniaturization requirements without worsening their multi-functional properties. Most probably the CNTs are also good candidates for spintronics applications in view of their unusually long spin diffusion length. It is well-known that electrons can travel through carbon nanotubes up to many hundreds of nanometers, still keeping their momentum and spin orientation. So CNTs are believed to be useful in the near future microelectronics (or molecular electronics) as interconnects, and possibly also as active elements in integrated circuits. Physical properties of the CNTs connected to metallic electrodes depend critically on a quality of CNT/metal junctions, and may evolve with increasing transparencies of the j...

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confidence: 99%

Spin‐polarized transport through carbon nanotubes

Krompiewski

2005

Physica Status Solidi (b)

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“…When the circuit connection was at configuration A, I A (1,1) >I A (1,0) ≈I A (0,1) >I A (0,0) . In the range of I A (1,1) >I >I A (1,0) , the device for only logic input (1,1) was at LRS (logic output=0), and for the other logic inputs of (0,0), (1,0) and (0,1) was at HRS (logic output=1), which represented the NAND logic operation. In the range of I A (1,0) >I >I A (0,0) , the device for only logic input (0,0) was at HRS (logic output=1), and for the other logic inputs of (1,1), (1,0) and (0,1) was at LRS (logic output=0), which represented the NOR logic operation.…”

Section: Pma-based Magnetic Logicmentioning

confidence: 99%

“…When the MR device was at configuration B (Fig. 6a), the Zener diode was connected between the 2 nd -3 rd electrodes and I B (0) >I B (1) . The resistance transition of magnetization up appeared after that of magnetization down.…”

Section: Pma-based Magnetic Logicmentioning

confidence: 99%

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Magnetic logic based on diode-assisted magnetoresistance

Luo

Zhang

2017

AIP Advances

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Conventional computer suffers from the von Neumann performance bottleneck due to its hardware architecture that non-volatile memory and logic are separated. The new emerging magnetic logic coupling the extra dimension of spin, shows the potential to overcome this performance bottleneck. Here, we propose a novel category of magnetic logic based on diode-assisted magnetoresistance. By coupling Hall effect and nonlinear transport property in silicon, all four basic Boolean logic operations including AND, NAND, OR and NOR, can be programmed at room temperature with high output ratio in one silicon-based device. Further introducing anomalous Hall effect of magnetic material into magnetic logic, we achieve perpendicular magnetic anisotropy-based magnetic logic which combines the advantages of both high output ratio (>103 %) and low work magnetic field (∼1 mT). Integrated with non-volatile magnetic memory, our logic device with unique magnetoelectric properties has the advantages of current-controlled reconfiguration, zero refresh consumption, instant-on performance and would bridge the processor-memory gap. Our findings would pave the way in magnetic logic and offer a feasible platform to build a new kind of magnetic microprocessor with potential of high performance.

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“…High-k dielectric materials have been intensively investigated as alternative gate dielectrics to SiO 2 for application in advanced semiconductor devices in recent years [1]. Among the prominent candidates in high-k materials, amorphous Zr and Hf based complex oxides have been largely studied due to their composition-tunable structure and electrical properties [2,3].…”

Section: Introductionmentioning

confidence: 99%

Band alignment and optical properties of (ZrO2)0.66(HfO2)0.34 gate dielectrics thin films on p-Si (100)

Shin

Son

Kim

et al. 2011

JSA

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(ZrO 2 ) 0.66 (HfO 2 ) 0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gaps were obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for (ZrO 2 ) 0.66 (HfO 2 ) 0.34 dielectric thin film grown on Si substrate were about 5.34, 2.35 and 1.87 eV, respectively. The band alignment is similar to that of ZrO 2 thin film. In addition, The dielectric function ε(k,ω), index of refraction n and the extinction coefficient k for the (ZrO 2 ) 0.66 (HfO 2 ) 0.34 thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-ε(k,ω)-REELS software package. These optical properties for (ZrO 2 ) 0.66 (HfO 2 ) 0.34 thin films are similar to that of ZrO 2 dielectric thin films.

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The end of the road for silicon?

Cited by 309 publications

References 5 publications

Spin‐polarized transport through carbon nanotubes

Spin‐polarized transport through carbon nanotubes

Magnetic logic based on diode-assisted magnetoresistance

Band alignment and optical properties of (ZrO<sub>2</sub>)<sub>0.66</sub>(HfO<sub>2</sub>)<sub>0.34</sub> gate dielectrics thin films on <i>p</i>-Si (100)

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