The energy spectrum and the electrical conductivity of graphene with substitution impurity

Repetsky, S. P.; Vyshyvana, I. G.; Kruchinin, S. P.; Melnyk, Ruslan; Polishchuk, A. Ia.

doi:10.5488/cmp.23.13704

Cited by 6 publications

(3 citation statements)

References 20 publications

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“…The so-called coherent potential approximation (CPA) represents another example of selfconsistent approach routinely used for the theoretical analysis of conventional disordered matter [4,20]. However, CPA studies of spectral and transport properties of disordered 2D Dirac materials are still scarce in the literature [21][22][23], particularly in the context of surface states of topological insulators.…”

Section: Introductionmentioning

confidence: 99%

Many-impurity scattering on the surface of a topological insulator

Vicario¹,

Baba²,

Díaz³

et al. 2020

Preprint

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We theoretically address the impact of a random distribution of non-magnetic impurities on the surface states formed at the interface between a trivial and a topological insulator. The interaction of electrons with the impurities is accounted for by a separable pseudo-potential method that allows us to obtain closed expressions for the density of states. Spectral properties of surface states are assessed by means of the Green's function averaged over disorder realizations. For comparison purposes, the configurationally averaged Green's function is calculated by means of two different selfconsistent methods, namely the self-consistent Born approximation (SCBA) and the coherent potential approximation (CPA). The latter is often regarded as the best singlesite theory for the study of the spectral properties of disordered systems. However, although a large number of works employ the SCBA for the analysis of many-impurity scattering on the surface of a topological insulator, CPA studies of the same problem are scarce in the literature. In this work we find that the SCBA overestimates the impact of the random distribution of impurities on the spectral properties of surface states compared to the CPA predictions. The difference is more pronounced when increasing the magnitude of the disorder.

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Section: Introductionmentioning

confidence: 99%

Many-impurity scattering on the surface of a topological insulator

Vicario¹,

Baba²,

Díaz³

et al. 2020

Preprint

View full text Add to dashboard Cite

show abstract

“…The so-called coherent potential approximation (CPA) represents another example of a self-consistent approach routinely used for the theoretical analysis of conventional disordered matter 4,20 . However, CPA studies of spectral and transport properties of disordered 2D Dirac materials are still scarce in the literature [21][22][23] , particularly in the context of surface states of topological insulators.…”

mentioning

confidence: 99%

Many-impurity scattering on the surface of a topological insulator

Vicario

Baba

Díaz

et al. 2021

Sci Rep

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We theoretically address the impact of a random distribution of non-magnetic impurities on the electron states formed at the surface of a topological insulator. The interaction of electrons with the impurities is accounted for by a separable pseudo-potential method that allows us to obtain closed expressions for the density of states. Spectral properties of surface states are assessed by means of the Green’s function averaged over disorder realisations. For comparison purposes, the configurationally averaged Green’s function is calculated by means of two different self-consistent methods, namely the self-consistent Born approximation (SCBA) and the coherent potential approximation (CPA). The latter is often regarded as the best single-site theory for the study of the spectral properties of disordered systems. However, although a large number of works employ the SCBA for the analysis of many-impurity scattering on the surface of a topological insulator, CPA studies of the same problem are scarce in the literature. In this work, we find that the SCBA overestimates the impact of the random distribution of impurities on the spectral properties of surface states compared to the CPA predictions. The difference is more pronounced when increasing the magnitude of the disorder.

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“…One of Dirac electrons' most dramatic responses become apparent at the strain and defect engineering of graphene. Both the strains [1][2][3][4][5][6][7][8][9][10][11] and defects (dopants) [12][13][14][15][16][17][18][19][20][21][22] are currently known as ones of the means whereby the problem of a band gapless in graphene can be overcome. Besides, a variety of different types of point-(dopants) [23][24][25] and line-acting (grain boundaries) [26][27][28] defects is commonly an inherent feature for the graphene-based devices [29].…”

mentioning

confidence: 99%

Sensitivity to strains and defects for manipulating the conductivity of graphene

Sahalianov¹,

Radchenko²,

Tatarenko³

et al. 2020

EPL

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Implementing the quantum-mechanical Kubo-Greenwood formalism for the numerical calculation of dc conductivity, we demonstrate that the electron transport properties of a graphene layer can be tailored through the combined effect of defects (point and line scatterers) and strains (uniaxial tension and shear), which are commonly present in a graphene sample due to the features of its growth procedure and when the sample is used in devices. Motivated by two experimental works (He X. et al. Appl. Phys. Lett., 104 (2014) 243108; 105 (2014) 083108), where authors did not observe the transport gap even at large (22.5% of tensile and 16.7% of shear) deformations, we explain possible reasons, emphasizing on graphene's strain and defect sensing. The strain- and defect-induced electron-hole asymmetry and anisotropy of conductivity, and its nonmonotony as a function of deformation suggest perspectives for the strain-defect engineering of electrotransport properties of graphene and related 2D materials.

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The energy spectrum and the electrical conductivity of graphene with substitution impurity

Cited by 6 publications

References 20 publications

Many-impurity scattering on the surface of a topological insulator

Many-impurity scattering on the surface of a topological insulator

Many-impurity scattering on the surface of a topological insulator

Sensitivity to strains and defects for manipulating the conductivity of graphene

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