The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix

Jia, Hui; Yang, Junjie; Tang, Mingchu; Li, Wei; Jurczak, P.; Yu, Xingxing; Zhou, Taojie; Park, Jae-Seong; Li, Keshuang; Deng, Huiwen; Yu, Xueying; Li, Ang; Chen, Siming; Seeds, A.J.; Liu, Huiyun

doi:10.1088/1361-6463/ac95a3

Cited by 3 publications

(3 citation statements)

References 27 publications

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“…Nevertheless, the requirement of a hydrogen source is unsuitable for migrating such methods into MBE systems. The MBE system has a unique advantage in obtaining high-quality QDs [53], which are insensitive to defects and have been regarded as one of the most promising gain media for high-performance Si-based on-chip laser sources [54]. Developing an APB-free III-V layer by a single system simplifies the growth process and is economical in the long term.…”

Section: Mbe Grown Apb-free Gaas/si (001)mentioning

confidence: 99%

From Challenges to Solutions, Heteroepitaxy of GaAs-Based Materials on Si for Si Photonics

Yang,

Deng,

Park

et al. 2024

Thin Films - Growth, Characterization and Electrochemical Applications

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Monolithic growth of III-V materials onto Si substrates is appealing for realizing practical on-chip light sources for Si-based photonic integrated circuits (PICs). Nevertheless, the material dissimilarities between III-V materials and Si substrates inevitably lead to the formation of crystalline defects, including antiphase domains (APBs), threading dislocations (TDs), and micro-cracks. These nontrivial defects lead to impaired device performance and must be suppressed to a sufficiently low value before propagating into the active region. In this chapter, we review current approaches to control the formation of defects and achieve high-quality GaAs monolithically grown on Si substrates. An APB-free GaAs on complementary-metal-oxide semiconductor (CMOS)-compatible Si (001) substrates grown by molecular beam epitaxy (MBE) only and a low TD density GaAs buffer layer with strained-layer superlattice (SLS) and asymmetric step-graded (ASG) InGaAs layers are demonstrated. Furthermore, recent advances in InAs/GaAs quantum dot (QD) lasers as efficient on-chip light sources grown on the patterned Si substrates for PICs are outlined.

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Section: Mbe Grown Apb-free Gaas/si (001)mentioning

confidence: 99%

From Challenges to Solutions, Heteroepitaxy of GaAs-Based Materials on Si for Si Photonics

Yang,

Deng,

Park

et al. 2024

Thin Films - Growth, Characterization and Electrochemical Applications

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“…Si-based photonic integrated circuits have several potential applications in this field. Because Si is an indirect band gap semiconductor, it cannot be utilized as an effective light source, which is a difficult problem to solve in Si photonics [1][2][3][4][5]. On the other hand, GaAs and InP are typical III-V compound semiconductors, which have a direct band gap and thus have high luminous efficiency [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Continuous-wave operation of Si-based 1.31 μm InAs/GaAs quantum-dot laser grown by molecular beam epitaxy

Cao

Shixian

et al. 2023

Phys. Scr.

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Excellent performance III-V quantum-dots (QD) lasers grown on Si substrates by molecular beam epitaxy (MBE) are the most promising candidates for commercially viable Si-based lasers. This makes coveted chip-to-chip and system-to-system optical interconnections feasible. This paper reports the realization of high performance 1.31-μm InAs/GaAs QD lasers on a Si substrate with all-MBE. The transition from Si to GaAs was realized using Ge as the intermediary layer, and the InAs/GaAs QD laser structure was grown on the GaAs/Ge buffer. Under continuous wave (CW) operation mode, a low threshold current density of 375 A/cm2, high output power of 63 mW, and high operating temperature of 80 °C, have been achieved using Si-based InAs QD lasers with a narrow ridge structure. It has great potential for application in the development of Si-based photonic integration circuits.

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“…Growth of III-V layers on Ge substrates has been reported with great success recently for various applications [16,19,20]. About 980 and 940 nm emitting VCSELs have previously been demonstrated on 150 mm Ge substrates [21], with device performance at 940 nm comparable to GaAs substrate VCSELs, with fabrication completed only on small area tiles.…”

Section: Introductionmentioning

confidence: 99%

Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs

Gillgrass

Allford

Peach

et al. 2023

J. Phys. D: Appl. Phys.

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Vertical cavity surface emitting laser (VCSEL) devices and arrays are increasingly important in meeting the demands of today’s wireless communication and sensing systems. Understanding the origin of non-uniform wet thermal oxidation across large-area VCSEL wafers is a crucial issue to ensure highly reliable, volume-manufactured oxide-confined VCSEL devices. As VCSEL wafer diameters approach 200 mm, germanium (Ge) is emerging as an alternative substrate solution. To this end, we investigate the uniformity of 940 nm-emitting VCSEL performance across 150 mm diameter GaAs- and Ge-substrates, comparing the oxidation method in each case. Nominally identical epitaxial structures are used to evaluate the strain induced wafer bow for each substrate type with Ge exhibiting a reduction of over 100 μm in the peak-to-valley distortion when compared with GaAs. This wafer bow is found to be the principal cause of centre-to-edge oxidation non-uniformity when utilising a conduction-heated chuck furnace, in comparison to a convection-heated tube furnace. Using on-wafer testing of threshold current, differential resistance, and emission wavelength, device performance is demonstrated for the first time across a 150 mm Ge wafer, and is shown to be comparable to performance on GaAs substrates, when the effects of oxidation uniformity are removed. These results provide evidence that there is a realistic path to manufacturing high yield VCSELs, over wafer diameters approaching those used in Si-photonics, via Ge substrates.

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The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix

Cited by 3 publications

References 27 publications

From Challenges to Solutions, Heteroepitaxy of GaAs-Based Materials on Si for Si Photonics

From Challenges to Solutions, Heteroepitaxy of GaAs-Based Materials on Si for Si Photonics

Continuous-wave operation of Si-based 1.31 μm InAs/GaAs quantum-dot laser grown by molecular beam epitaxy

Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs

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