The epitaxial growth of zinc sulphide on silicon by forced vapour transport in argon flow

Lilley, P.; Jones, P.L.; Litting, C N W

doi:10.1016/0022-0248(72)90186-8

Cited by 12 publications

(3 citation statements)

References 4 publications

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“…L'hydrogène ne sert donc pas uniquement de gaz vecteur, il doit présenter une réactivité chimique non négligeable avec la source de ZnSe solide. Notons que Lilley, Jones et Litting ont fait des constatations semblables dans le transport du sulfure de zinc sous flux d'argon [16] ou d'hydrogène [17].…”

Section: Tableauunclassified

Évaporation du séléniure de zinc en tube ouvert sous flux d'argon et d'hydrogène

Chevrier

Etienne

Bougnot

1974

Rev. Phys. Appl. (Paris)

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Abstract. 2014 We have been interested in thermodynamical equilibria describing the transport in vapor phase of a zinc selenide source exposed to an argon or hydrogen flow, at high temperature. We have studied the evaporation of that compound in the low linear velocity range. Then, we have shown the influence of hydrogen with respect to the inert gas and confirmed the use of the most recent thermochemical data for SeH2(g) which account well for our experimental results. Fick's diffusion law has been successfully applied to these results.

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Section: Tableauunclassified

Évaporation du séléniure de zinc en tube ouvert sous flux d'argon et d'hydrogène

Chevrier

Etienne

Bougnot

1974

Rev. Phys. Appl. (Paris)

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“…Over the last three decades a substantial body of work has been published on epitaxial films of these compounds. Experimental studies established technological parameters (like substrate temperature) of perfect layers growth by different methods such as vacuum evaporation [4], chemical vapour transport techniques [5,6], sputtering [7] or electron beam evaporation [8], on several types of substrates made from mica, ionic crystals (e.g. NaCl, KCl) or Si, Ge and II-VI bulk crystals (see review paper [9,10] and references therein).…”

Section: Introductionmentioning

confidence: 99%

Electron Diffraction of 3-D Defects in Nanostructural II-VI Semiconductors

Kuźma

2003

DDF

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defects in nanostructures seem to play crucial influence on their properties. Twinnings are the most popular 3D defects in II-VI semiconductor compounds having zinc-blende structure (Zn, Cd chalcogenides). These defects are of {111} type. Electron diffraction of such defected crystals as well as nanostructures (thin layers, clusters and other nanoscale individuals) results in satellite spots placed around the main single crystal spots in diffraction pattern. This is due to the different orientation of the matrix and twins of the first and higher orders with respect to the electron beam. Basing on a reciprocal lattice of twinned structure, the interpretation of nature of satellite spots is addressed. The double positioning, primary and double diffraction were described. The considerations were applied to the nanostructured epitaxial CdTe and Hg 1-x Cd x Te layers obtained by laser deposition.

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“…For ZnSe, ZnS, the literature describes many methods dealing with the growth of ZnSe (1-5) or ZnS VAPOR (6)(7)(8)(9), but information on the zinc sulfoselenide system, however, is rather sketchy (4,(10)(11)(12) and the crystals obtained are reported to be inhomogeneous.…”

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confidence: 99%

Epitaxial Growth of Cubic ZnS x Se1 − x by Vapor Phase Transport

Etienne

Soonckindt

Bougnot

1980

J. Electrochem. Soc.

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unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 137.99.31.134 Downloaded on 2015-05-16 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 137.99.31.134 Downloaded on 2015-05-16 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 137.99.31.134 Downloaded on 2015-05-16 to IP

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The epitaxial growth of zinc sulphide on silicon by forced vapour transport in argon flow

Cited by 12 publications

References 4 publications

Évaporation du séléniure de zinc en tube ouvert sous flux d'argon et d'hydrogène

Évaporation du séléniure de zinc en tube ouvert sous flux d'argon et d'hydrogène

Electron Diffraction of 3-D Defects in Nanostructural II-VI Semiconductors

Epitaxial Growth of Cubic ZnS x Se1 − x by Vapor Phase Transport

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