The Epitaxial Orientation of Al on Si

Abstract

It is shown that the epitaxial growth of A1 on Si (1 11) favours the epitaxial relation {lll}Sill (100)Al; (1lO)SiII (1lO)Al instead of the more expected relation {111}SiI/ {111}Al; (11O)SiII (1lO)Al.The elastic energy density of the epitaxial layer in the first case mounts to about 40% of that belonging to the second relation. The calculation of the elastic energy density in both cases is based on the assumption of pseudomorphical epitaxial film overgrowth between deposit and substrate supercells.