1995
DOI: 10.1016/0039-6028(95)00230-8
|View full text |Cite
|
Sign up to set email alerts
|

The equilibrium shape of silicon

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

2
65
0

Year Published

1999
1999
2020
2020

Publication Types

Select...
8
2

Relationship

0
10

Authors

Journals

citations
Cited by 125 publications
(67 citation statements)
references
References 38 publications
2
65
0
Order By: Relevance
“…In figure 7 is reported the surface free energy anisotropy obtained by Wulf inversion of the experimental equilibrium shape (T = 1373 K) [14,42]. This method does not allow obtaining the absolute values of the free surface energies but only the relative ones.…”
Section: Surface Stress Versus Surface Energymentioning
confidence: 99%
“…In figure 7 is reported the surface free energy anisotropy obtained by Wulf inversion of the experimental equilibrium shape (T = 1373 K) [14,42]. This method does not allow obtaining the absolute values of the free surface energies but only the relative ones.…”
Section: Surface Stress Versus Surface Energymentioning
confidence: 99%
“…This is, however, not so. The traditional way to determine the step energy from the equilibrium shape of crystals is barred with many nontrivial experimental difficulties and additionally requires as an input the free energy of the flat surfaces [17,18], which in turn is not known very accurately. The step-free energy derived from the chemical potential of islands as observed in Ostwald ripening of islands appears to be unrealistically high for reasons hitherto not understood [12].…”
mentioning
confidence: 99%
“…Steps on the Si͑111͒ ͑1 ϫ 1͒ surface, which are the subject of the investigations described here, have been studied widely 3,8,[15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33] due to their intriguing phenomenology. The Si͑111͒ surface undergoes a structural phase transition between ͑7 ϫ 7͒ and ͑1 ϫ 1͒ configurations at a transition temperature of T c = 1133 K. The step line tension is expected to be nearly isotropic on the Si͑111͒ ͑1 ϫ 1͒ surface above T c .…”
Section: Introductionmentioning
confidence: 99%