The era of hyper-scaling in electronics

Salahuddin, Sayeef; Ni, Kai; Datta, Suman

doi:10.1038/s41928-018-0117-x

Cited by 492 publications

(281 citation statements)

References 46 publications

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“…Another important application is in low‐power transistors for which the subthreshold swing (SS) must be lowered than the 60 mV/decade value, typical for CMOS transistors, using ferroelectric negative capacitance FETs . This approach is of outmost importance for electronics beyond Moore law, being a vector in the era of hyper‐scaling electronics …”

Section: Ferroelectrics and Their Applicationsmentioning

confidence: 99%

2D Materials Nanoelectronics: New Concepts, Fabrication, Characterization From Microwaves up to Optical Spectrum

Dragoman

Dinescu

Dragoman³

2019

Physica Status Solidi (a)

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The paper presents the state-of-the art of nanoelectronic devices based on 2D materials related to the cutting edge of Moore's law. Ballistic electron devices, ferroelectric, and atomically thin heterostructures are analyzed to show the benefits of 2D materials applications in nanoelectronics. It is shown that these new devices fulfill the basic requirements for further developments of new materials and circuits architectures envisaged beyond the Moore law. However, in many aspects, these new devices, concepts, as well as their implementations, are at the very beginning, so that the main obstacles to be overcome and the inherent difficulties to design and fabricate nanoelectronic devices based on single-atom-or few-atoms-thick materials are also presented.

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Section: Ferroelectrics and Their Applicationsmentioning

confidence: 99%

2D Materials Nanoelectronics: New Concepts, Fabrication, Characterization From Microwaves up to Optical Spectrum

Dragoman

Dinescu

Dragoman³

2019

Physica Status Solidi (a)

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“…We will particularly focus on the methods allowing fine control of 3D structures resulting from iterative self‐assembly approaches. The emergence of 3D nanoelectronic devices highlights the importance of advancing nanofabrication methods to precisely position material stack layers. In this regard, there is a clear motivation to assess the potential of BCP materials that can be patterned to form “non‐native” morphologies .…”

Section: Introductionmentioning

confidence: 99%

Non‐Native Block Copolymer Thin Film Nanostructures Derived from Iterative Self‐Assembly Processes

Demazy

Cummins

Aissou

et al. 2019

Adv Materials Inter

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Nanostructured block copolymer (BCP) thin films constitute an elegant tool to generate complex periodic patterns with periodicities ranging from a few nanometers to hundreds of nanometers. Such well‐organized nanostructures are foreseen to enable next‐generation nanofabrication research with potent applications in the design of functional materials in biology, optics or microelectronics. This valuable platform is, however, limited by the geometric features attainable from diblock copolymer architectures considering the thermodynamic driving force leaning toward the formation of structures minimizing the interface between the blocks. Therefore, strategies to enrich the variety of structures obtained by BCP self‐assembly processes are gaining momentum and this progress report reviews the opportunities inherent to iterative BCP self‐assembly by considering the emerging strategies for the generation of “non‐native” morphologies.

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“…Thus, over the past five to eight years, there has been an ever-increasing sense that something has to be done about this issue. [7][8][9][10][11] We now introduce into this the third critical component, namely, energy consumption. Of the many issues, we focus on the energy consumed per logic operation, which in today's CMOS transistor is on the order of 50-100 picojoules/logic operation.…”

Section: Introductionmentioning

confidence: 99%

“…The microscopic behavior of electronic charge is governed by the Boltzmann distribution. 1,11 A quick analysis shows that the current changes exponentially with voltage, with a slope of 60 mV/decade of current. Macroscopically, this manifests itself as an I d -V g plot with a slope of 60 mV/decade, under ideal conditions, termed as the "Boltzmann tyranny (it is a 'tyranny' because the Boltzmann distribution 'imposes' its will onto the systems behavior)."…”

Section: Introductionmentioning

confidence: 99%

“…Macroscopically, this manifests itself as an I d -V g plot with a slope of 60 mV/decade, under ideal conditions, termed as the "Boltzmann tyranny (it is a 'tyranny' because the Boltzmann distribution 'imposes' its will onto the systems behavior)." 1,11 In real transistors, the slope can be larger. This fundamental behavior is central to the performance of the transistor, both in terms of the voltage that is required and the energy consumed in the process of operating the transistor.…”

Section: Introductionmentioning

confidence: 99%

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