The EUV metrology program of PTB

Klein, R.; Laubis, Christian; Müller, Ralf; Scholze, Frank; Ulm, G.

doi:10.1016/j.mee.2006.01.096

Cited by 39 publications

(15 citation statements)

References 13 publications

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“…All optical tests were carried out at the EUV-and UV/VUV-beamline synchrotron radiation laboratories of PTB (Physikalisch-Technische Bundesanstalt) in Berlin, Germany [15][16] [17]. As shown in Figure 5a, an array of four photodiodes was assembled on a ceramic substrate.…”

Section: Optical Performancementioning

confidence: 99%

High-sensitivity high-stability silicon photodiodes for DUV, VUV and EUV spectral ranges

et al. 2011

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In this paper, the optical and electrical performance of a newly developed silicon photodiode based on pure boron CVD technology (PureB-diodes) is introduced. Due to their extremely shallow p-n junction, with the depletion zone starting only a few nanometers below the surface, and nm-thin pure-boron-layer coverage of the anode surface, PureB-diodes have so far demonstrated the highest reported spectral responsivity in all sub-visible ultraviolet (UV) ranges: DUV (deep ultraviolet), VUV (vacuum ultraviolet) and EUV (extreme ultraviolet), covering a spectrum from 220 nm down to few. Moreover, the measured responsivity at 13.5 nm wavelengths (EUV) approaches the theoretical maximum (~0.27A/W) [5][6]. PureB-diodes also maintain excellent electrical characteristics, with saturation-current values typical for high-quality silicon diodes, and a high breakdown voltage. Experimental results have demonstrated the extremely high radiation hardness of PureB-diodes when exposed to high EUV radiant exposures in the order of a few hundred kJ/cm 2 [4]. No change in the responsivity is observed within the experimental uncertainty. In the more challenging DUV and especially VUV ranges, PureB-diodes demonstrate a slight initial drop of responsivity (1 to 2%), after which they stabilizes their performance [2].

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Section: Optical Performancementioning

confidence: 99%

High-sensitivity high-stability silicon photodiodes for DUV, VUV and EUV spectral ranges

et al. 2011

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“…As done for the VUV diodes, the EUV optical characterization was performed at PTB (Klein et al, 2006). A measurement example is shown in Fig.…”

Section: Euv Radiation Detectorsmentioning

confidence: 99%

Silicon Photodiodes for Low Penetration Depth Beams such as DUV/VUV/EUV Light and Low-Energy Electrons

Nanver¹

2011

Advances in Photodiodes

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“…Using stable and well-characterized synchrotron radiation, PTB performs in its BESSY II laboratory -in cooperation with industry and research institutes -the characterization of optical components (reflectometry), the calibration and characterization of EUV radiation detectors and sources, and lifetime characterization of optics and sensors [15][16][17]. To fulfill the growing demands of the industry, we are planning a dedicated EUV beamline at the MLS.…”

Section: Beamlines and Instrumentation At The Mlsmentioning

confidence: 99%