The evaluation of the Al/ZnO/Si/Al heterojunction diode current-conducting mechanisms

Abstract

This work focuses on the electrical transport and conduction mechanisms — inside a sprayed — made zinc oxide-on-p-type silicon junction device. A fabricated Al/ZnO/Si/Al heterojunction is characterized at 300 and 380[Formula: see text]K in the dark. The aforementioned theories predict that the current density (J) is an exponential function of measured voltage (V) and work temperature (T). Exponential equations are linearized as a result of a current conduction mechanism (CCM) kind. Useful parameters like barrier height [Formula: see text] of trap are extracted from the slope B. Ohmic and space charge limited current (SCLC) regimes inside are studied at 300 and 380[Formula: see text]K recording a shift in exponent as a result of temperature. Fowler–Nordheim (FN) conduction mechanism inside Al/ZnO/Si/Al device is considered slope and [Formula: see text] values are determined for two cited work temperatures. Our device presents a thermionic emission (TE) and exhibits an effect of temperature on slope and intercept values of (ln[Formula: see text]/A*[Formula: see text]) function. The Poole–Frenkel (PF) emission in terms of 1/V data are presented for 300 and 380[Formula: see text]K. Besides, PF emission mechanism in terms of 1/[Formula: see text] is exhibited and parameters are influenced by temperature. Behavior of conductance as a result of temperature is detailed and evidenced.