The Evolution of the Conductivity and Cathodoluminescence of the Films of Hafnium Oxide in the Case of a Change in the Concentration of Oxygen Vacancies

Islamov, Damir R.; Gritsenko, V. A.; Кручинин, В. Н.; Иванова, Э. В.; Zamoryanskaya, M. V.; Lebedev, M. S.

doi:10.1134/s1063783418100098

Cited by 12 publications

(21 citation statements)

References 26 publications

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“…Spectroscopic investigations and computational calculations by DFT have evidenced that oxygen vacancies play a major role as defect centers responsible for the optical emissions in hafnia. In fact, different variants of oxygen vacancies have been related to additional electronic levels within the bandgap of HfO 2 . Nevertheless, in nominally pure HfO 2 NPs, the intrinsic defect‐related band centered at around 2.50 eV overlaps with the blue emission due to accidental Ti impurities in the matrix.…”

Section: Radioluminescencementioning

confidence: 99%

The Bright X‐Ray Stimulated Luminescence of HfO₂ Nanocrystals Activated by Ti Ions

Villa

Moretti

Fasoli

et al. 2019

Advanced Optical Materials

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The recent trends in scintillator technologies stimulate research efforts toward the development of novel materials morphologies, such as nanoparticles, able to efficiently convert ionizing radiations into light. For example, scintillating nanoparticles attract great interest in medical oncological therapies. In this work, the structural and morphological properties of HfO2:Ti nanoparticles with Ti concentrations from 0.03 to 10 mol% and subjected to calcination up to 1000 °C are thoroughly characterized; moreover, X‐ray photoelectron spectroscopy reveals the incorporation of Ti in both Ti (III) and Ti (IV) chemical states in as prepared samples, while the exclusive presence of Ti(IV) is unambiguously identified in calcined nanoparticles. The optical emission under X‐ray excitation evidences an intense Ti (IV)‐related luminescence at 2.5 eV in high temperature calcined samples with a few microseconds scintillation lifetime, and efficiency comparable to that of Bi4Ge3O12 reference scintillator. Finally, the competitive role of defects in charge carriers capture is demonstrated by the monotonic increase of the 2.5 eV band during prolonged X‐ray irradiation, more evident for nanoparticles with titanium concentration below 1 mol%. HfO2:Ti may also find application in X‐ray triggered oncological therapies by using the Ti (IV)‐related bright radioluminescence to excite photosensitizer molecules for singlet oxygen generation.

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Section: Radioluminescencementioning

confidence: 99%

The Bright X‐Ray Stimulated Luminescence of HfO₂ Nanocrystals Activated by Ti Ions

Villa

Moretti

Fasoli

et al. 2019

Advanced Optical Materials

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“…A band with an emission energy of 2.7 eV (BB) was previously observed in hafnium oxide HfO 2 [1,10], in zirconium oxide ZrO 2 [11][12][13], in hafnium-zirconium oxide HfZrO [3]. Based on experimental data on the luminescence of these materials, electrophysical studies, photoelectron spectroscopy and quantum chemical modeling, it was found that for sky-blue luminescence band in HfO 2 , ZrO 2 , HfZrO are answerable the single oxygen vacancies [3,[6][7][8][9][10][11][12]. This is confirmed in the present experiment by increase in the intensity of the 2.7 eV band after annealing the samples in an inert argon medium (Figs.…”

Section: Resultsmentioning

confidence: 84%

“…In the CL spectrum of the undoped sample, a broad luminescence band is observed in the visible region of the spectrum with emission maximum of 2.5 eV. According to the literature data [5,8], this band is the sum of two bands with emission maximums of 2.2 (YB) and 2.7 eV (BB). The CL spectrum also exhibits a lowenergy shoulder in the infrared region of the spectrum with an energy of 1.7 eV and a high-energy shoulder in the ultraviolet region of the spectrum with an energy of 3.3 eV.…”

Section: Resultsmentioning

confidence: 95%

“…Due to the fact that La : Hf 0.5 Zr 0.5 O 2 is a wide gap material, the cathodoluminescence (CL) method was used to study the luminescent properties . CL is an informative method for studying defects in dielectrics [7,8]. The purpose of present work is to study the effect of defects in La : Hf 0.5 Zr 0.5 O 2 on the luminescent properties of the films.…”

Section: Introductionmentioning

confidence: 99%

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Cathodoluminescence of intrinsic defects in films La : HfZrO

E.V.

M.V.

V.A.

2022

Optics and Spectroscopy

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Lanthanum-doped (La:(HfZr)O2) nanometer films of a solid solution of hafnium oxide and zirconium oxide are of great interest for the development of a universal memory that combines an unlimited number of RAM reprogramming cycles and nonvolatile flash memory. This work is devoted to studying the cathodoluminescent properties of La : HfZrO thin films with different contents of lanthanum. It is shown that the cathodoluminescence spectra are dominated by two emission bands with intensity maxima at 2.7 and 2.2 eV. The blue band with an energy of 2.7 eV is due to an oxygen vacancy in La : HfZrO. The study of the influence of the lanthanum impurity and annealing of the samples in argon suggests that the yellow band with the emission maximum at 2.2 eV is related to the oxygen divacancy. Keywords: luminescence, hafnium oxide, zirconium oxide, oxygen vacancy.

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“…Красная полоса (2.05 eV) является рекомбинацией свободных дырок с электронами на ловушках и может быть обусловлена комплексами междоузельного титана и вакансии кислорода [15]. Фотолюминесценция оксида гафния преимущественно связана с вакансией кислорода, а ее полосы излучения интерпретированы в работе [16].…”

Section: Introductionunclassified

Диагностика Технологии Оксидов Титана И Гафния Методами Люминесценции

Булярский¹,

Гусаров²,

Дудин³

et al. 2023

Оптика И Спектроскопия

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The article shows the role of oxygen vacancies in the formation of luminescence bands of titanium and hafnium oxides, and also demonstrates the relationship between the intensity of luminescence bands and the conditions for the synthesis of films of these materials. It is concluded that photoluminescence is a very sensitive method for diagnosing the composition of oxides. Luminescence bands at 2.45 eV in titanium oxide and 2.91 eV in hafnium oxide make it possible to analyze the change in the film composition under various technological conditions of their production.

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The Evolution of the Conductivity and Cathodoluminescence of the Films of Hafnium Oxide in the Case of a Change in the Concentration of Oxygen Vacancies

Cited by 12 publications

References 26 publications

The Bright X‐Ray Stimulated Luminescence of HfO₂ Nanocrystals Activated by Ti Ions

The Bright X‐Ray Stimulated Luminescence of HfO₂ Nanocrystals Activated by Ti Ions

Cathodoluminescence of intrinsic defects in films La : HfZrO

Диагностика Технологии Оксидов Титана И Гафния Методами Люминесценции

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The Evolution of the Conductivity and Cathodoluminescence of the Films of Hafnium Oxide in the Case of a Change in the Concentration of Oxygen Vacancies

Cited by 12 publications

References 26 publications

The Bright X‐Ray Stimulated Luminescence of HfO2 Nanocrystals Activated by Ti Ions

The Bright X‐Ray Stimulated Luminescence of HfO2 Nanocrystals Activated by Ti Ions

Cathodoluminescence of intrinsic defects in films La : HfZrO

Диагностика Технологии Оксидов Титана И Гафния Методами Люминесценции

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The Bright X‐Ray Stimulated Luminescence of HfO₂ Nanocrystals Activated by Ti Ions

The Bright X‐Ray Stimulated Luminescence of HfO₂ Nanocrystals Activated by Ti Ions