The excess noise in buried-channel MOS transistors

Abstract

A definitive experiment is described on the excess noise in a buriedchannel MOS transistor. The specimen was biased with a uniform, Ohmic, channel. With the surface enhanced l/f noise is produced. With the surface depleted or inverted the noise drops by more than two orders of magnitude and takes on the character of the I/f noise observed in JFETS. Also seen is a large generation-recombination noise peak involving the fast surface states. The implications for excess noise theory and device design are discussed.

Low-frequency noise in junctionless multigate transistors

“…3͑a͒. 18,19 When V g Ͼ V fb , on the other hand, the depletion region disappears which will decrease the g-r noise in spite of the presence of a surface accumulation channel. 20 The accumulation channel contributes to the total noise as a result of fluctuations at the oxide-semiconductor interface.…”

Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs

“…where C ox is the gate dielectric capacitance per unit area, q is the electron charge, kT is the thermal energy, λ is the oxide tunneling attenuation distance, N t is the volumetric oxide trap density, WL is the channel area, and f is frequency. On the other hand, the Hooge mobility fluctuations (HMF) model, which is more suitable for explaining the conduction mechanism in the volume of devices [16]- [19], suggests that S Id /I d 2 is proportional to 1/I d [15]. However, S Id /I d 2 of the devices investigated in this work is well proportional to (g m /I d ) 2 , as shown in Fig.…”