The Exchange-Coupled Field in NiO/Ni Double Layer on Silica Substrates

Abstract

The effect of silica substrate on the exchange-coupled field H ex in NiO/Ni films was examined. Ni film was vacuum-evaporated on a silica substrate, and then it was oxidized thermally in oxygen to form a NiO/Ni double-layered film. In comparison with our previous results of NiO/Ni film on MgO, H ex for silica and MgO substrate showed almost the same behavior. When the substrate temperature was varied during the evaporation of Ni, it was found that the crystal orientation of Ni in the NiO/Ni double-layered film changes, and H ex is almost independent of the Ni crystal orientation.