The experimental investigation on dark current for InGaAs–InP avalanche photodiodes

Zhao, Yanli; He, Suxiang

doi:10.1016/j.mee.2012.06.001

Cited by 12 publications

(4 citation statements)

References 18 publications

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“…Generally, a higher reverse bias voltage causes a larger electric field in a conventional PD. Compared with the InP collector, the larger electric field generated by the InAlAs collector indicates that the InAlAs UTC-PD satisfies the requirements of a large critical voltage [30] and low dark current at a low bias for the avalanche effect. Furthermore, the electric field of the InAlAs UTC-PD showed a "zero-high profile" in the absorption-collector region, which is similar to the "low-high profile" in the absorption-multiplication region in the APD.…”

Section: Design and Fabricationmentioning

confidence: 99%

High-Responsivity Unitraveling Carrier–Type Photodetector Using Avalanche InAlAs as a Collector at a High-Frequency Range

Yi,

Umezawa,

Akahane

et al. 2024

IEEE Access

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In this study, we proposed a novel design for fabricating a unitraveling carrier-type photodetector using In0.52Al0.48As as the collector material. The proposed InAlAs photodetector is based on the structure of a conventional unitraveling carrier-type photodetector with an InP collector and is considered to transplant the concept of an avalanche photodetector using the avalanche material InAlAs. Based on the high responsivity of the avalanche photodetector at a high-frequency range, a unitraveling carrier-type photodetector with an avalanche InAlAs collector (10-μm junction diameter) was fabricated. The measured I-V characteristics showed that the proposed photodetector can demonstrate the avalanche effect. The measured 3-dB bandwidths were 43, 26, and 19 GHz at multiplication gains of 1, 2, and 3.5, respectively. Furthermore, the multiplied responsivity (defined as the product of gain and responsivity under the unit gain condition) was >0.6 A/W under the low gain condition (0.187 A/W under the unit gain condition). Furthermore, estimations for the 3-dB bandwidth were discussed, and the experimental results were found to be consistent with the simulation results. The improvements in the proposed photodetector with a 5-μm junction diameter were predicted. We expect the 3-dB bandwidth and responsivity of the proposed photodetector to reach 100 GHz and 0.7 A/W, respectively, with a low multiplication gain.INDEX TERMS avalanche effect, high-frequency range, high-responsivity, InAlAs collector, UTC-PD

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Section: Design and Fabricationmentioning

confidence: 99%

High-Responsivity Unitraveling Carrier–Type Photodetector Using Avalanche InAlAs as a Collector at a High-Frequency Range

Yi,

Umezawa,

Akahane

et al. 2024

IEEE Access

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“…Table 3 presents SWIR [ 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 ], MWIR [ 45 , 46 , 47 , 48 , 49 , 50 ] (PIN, SAM and SACM) state-of-art and LWIR, λ ~ 8 μm (230 K) HgCdTe SAM APDs based devices to include maximum gain ( M ), impact ionization ratio ( k ), excess noise factor F ( M ) and dark current mostly at M = 10. As presented, the majority of the published papers corresponds to the T = 300 K and SWIR range.…”

Section: Comparison Of λ ~ 8 μM (230 K) Hgcdte Ver...mentioning

confidence: 99%

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm

Kopytko

Sobieski

Gawron

et al. 2022

Sensors

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The trend related to reach the high operating temperature condition (HOT, temperature, T > 190 K) achieved by thermoelectric (TE) coolers has been observed in infrared (IR) technology recently. That is directly related to the attempts to reduce the IR detector size, weight, and power dissipation (SWaP) conditions. The room temperature avalanche photodiodes technology is well developed in short IR range (SWIR) while devices operating in mid-wavelength (MWIR) and long-wavelength (LWIR) require cooling to suppress dark current due to the low energy bandgap. The paper presents research on the potential application of the HgCdTe (100) oriented and HgCdTe (111)B heterostructures grown by metal-organic chemical vapor deposition (MOCVD) on GaAs substrates for the design of avalanche photodiodes (APDs) operating in the IR range up to 8 µm and under 2-stage TE cooling (T = 230 K). While HgCdTe band structure with molar composition xCd < 0.5 provides a very favorable hole-to-electron ionization coefficient ratio under avalanche conditions, resulting in increased gain without generating excess noise, the low level of background doping concentration and a low number of defects in the active layer is also required. HgCdTe (100) oriented layers exhibit better crystalline quality than HgCdTe (111)B grown on GaAs substrates, low dislocation density, and reduction of residual defects which contribute to a background doping within the range ~1014 cm–3. The fitting to the experimentally measured dark currents (at T = 230 K) of the N+-ν-p-P+ photodiodes commonly used as an APDs structure allowed to determine the material parameters. Experimentally extracted the mid-bandgap trap concentrations at the level of 2.5 × 1014 cm−3 and 1 × 1015 cm−3 for HgCdTe (100) and HgCdTe (111)B photodiode are reported respectively. HgCdTe (100) is better to provide high resistance, and consequently sufficient strength and uniform electric field distribution, as well as to avoid the tunneling current contribution at higher bias, which is a key issue in the proper operation of avalanche photodiodes. It was presented that HgCdTe (100) based N+-ν-p-P+ gain, M > 100 could be reached for reverse voltage > 5 V and excess noise factor F(M) assumes: 2.25 (active layer, xCd = 0.22, k = 0.04, M = 10) for λcut-off = 8 μm and T = 230 K. In addition the 4-TE cooled, 8 μm APDs performance was compared to the state-of-the-art for SWIR and MWIR APDs based mainly on III-V and HgCdTe materials (T = 77–300 K).

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“…Near-infrared InGaAs/InP avalanche photodiodes (APDs) are key devices in the fields of communication, lidar and others [1][2][3][4] . The structure with separated absorption, grade, charge and multiplication (SAGCM) and using InGaAs/InP APD epitaxial material, which can be mass-produced by metalorganic chemical vapor deposition (MOCVD), has been widely applied.…”

Section: Introductionmentioning

confidence: 99%

Surface plasmon enhanced InGaAs/InP APD based on mass-produced epitaxial materials

Chen¹,

Xie²,

Xie³

et al. 2023

International Conference on Optoelectronic Information and Functional Materials (OIFM 2023)

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The experimental investigation on dark current for InGaAs–InP avalanche photodiodes

Cited by 12 publications

References 18 publications

High-Responsivity Unitraveling Carrier–Type Photodetector Using Avalanche InAlAs as a Collector at a High-Frequency Range

High-Responsivity Unitraveling Carrier–Type Photodetector Using Avalanche InAlAs as a Collector at a High-Frequency Range

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm

Surface plasmon enhanced InGaAs/InP APD based on mass-produced epitaxial materials

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