The exploitation of magnetization orientation encoded spin-transfer torque for an ultra dense non-volatile magnetic shift register

Windbacher, Thomas; Makarov, Alexander; Sverdlov, Viktor; Selberherr, S.

doi:10.1109/essderc.2016.7599648

Cited by 2 publications

(1 citation statement)

References 11 publications

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“…[23,24] However, traditional two-terminalbased memristive materials can have low functionality, [25] which limits the number of shift register operations. Moreover, avoiding the loss of locally stored information when power is turned off and high cell count for processing each bit in traditional charged-based shift registers [26] remain crucial to realizing low energy and compact systems.…”

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confidence: 99%

Toward Single‐Cell Multiple‐Strategy Processing Shift Register Powered by Phase‐Change Memory Materials

Wang

Huang

et al. 2023

Advanced Intelligent Systems

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Computers are the foundations of everything from weapons systems to technologies utilized daily by businesses and consumers. The ever-increasing demand for data-intensive applications in business-related fields including machine learning and the internet of things requires highly energy-efficient hardware for operations such as autonomous driving, [1,2] speech recognition, [3,4] image classification, [5] and diseases diagnosis. [6] Moreover, there is an ever-rising demand for readily-accessible-data utilizations in consumer-grade products such as televisions, laptops, and tablets that require advanced technologies, e.g., during the Covid-19 pandemic, as people worked and learned via Zoom, socialized over Skype, and engaged on Netflix to alleviate the lockdown blues. Because these data-intensive/ readily-accessible-data applications require both high performance and energy-efficient operation, the power [7,8] and memory constraints imposed by von Neumann computers, with separate processing and storage units, limit the ability of conventional processors to meet optimal requirement for these applications. [9] Traditional computers utilize a wide range of memory technologies. [10,11] Prototypical register/static random-access memory (SRAM) technologies are fast (few nanoseconds) but volatile and have a low integration density, which limits their use to high-speed/ cache memory applications. [12] The register, based on a set of flip flops, plays a key role in accepting, storing, and transferring data and instructions that are being utilized immediately by the CPU, as well as other digital circuitries. [13] The data can be transferred in a serial manner using shift-based operations. [14] Moreover, conventional dynamic random-access memory (DRAM) technology is moderately fast (several ten nanoseconds) but volatile. [15] As a result, prototypical DRAM requires frequent refresh operations and thus has increased energy consumption. On the other hand, typical flash is nonvolatile but relatively slow (hundreds of microseconds). [11,16]

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confidence: 99%