The fabrication and characterization of ZnO UV detector

Moon, Tae Hyoung; Jeong, Min Chang; Lee, Woong; Myoung, Jae Min

doi:10.1016/j.apsusc.2004.06.149

Cited by 160 publications

(66 citation statements)

References 18 publications

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“…Solar-blind UV photodetectors have drawn much attention because of civil and military applications in astronomy, biology, flame sensors, and environmental monitoring [1,2]. The most common UV detectors currently in use are made from widebandgap inorganic semiconductors such as GaN [3], ZnO [4,5], and TiO 2 [6].…”

Section: Introductionmentioning

confidence: 99%

Hybrid ultraviolet photodetectors with high photosensitivity based on TiO2 nanorods array and polyfluorene

Han

Wang

et al. 2009

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Hybrid ultraviolet photodetectors with high photosensitivity based on TiO2 nanorods array and polyfluorene

Han

Wang

et al. 2009

Applied Surface Science

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“…Zinc oxide as an important and easily available semiconductor material is widely used for many applications such as solar cells [1], UV detectors [2,3], light emitting diodes (LEDs) [4], gas sensors [5], catalysts [6], etc. where the control of particle size, morphology and surface properties are of great importance.…”

Section: Introductionmentioning

confidence: 99%

Preparation of surface-modified ZnO quantum dots through an ultrasound assisted sol–gel process

Moghaddam

Youzbashi

Kazemzadeh

et al. 2015

Applied Surface Science

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13] Although the technology of ohmic and Schottky contacts preparation in ZnO is in its infancy, low-resistivity ohmic contacts to n-type material and p-type material have been demonstrated. Schottky diodes on n-ZnO have been plagued by low reproducibility and low thermal stability issues.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of undoped bulk ZnO substrates

Polyakov

Smirnov

Говорков

et al. 2006

J. Electron. Mater.

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Undoped bulk ZnO crystals obtained from Tokyo Denpa show either resistive behavior [(5 3 10 4 )-(3 3 10 5 ) Ohm cm) or low n-type conductivity (n ' 10 14 cm ÿ3 ) with mobilities in the latter case of 130-150 cm 2 /V sec. The variation in resistivity may be related to the thermal instability of Li that is present in the samples. The Fermi level is pinned by 90-meV shallow donors that are deeper than the 70 meV and hydrogen-related 35-meV shallow donors in Eagle Pitcher and Cermet substrates. In all three cases, 0.3-eV electron traps are very prominent, and in the Tokyo Denpa material they dominate the hightemperature capacitance-frequency characteristics. The concentration of these traps, on the order of 2 3 10 15 cm ÿ3 , is about 20 times higher in the Tokyo Denpa ZnO compared to the two other materials. The other electron traps at E c ÿ0.2 eV commonly observed in undoped n-ZnO are not detected in conducting Tokyo Denpa ZnO samples, but they may be traps that pin the Fermi level in the more compensated high-resistivity samples.

show abstract

The fabrication and characterization of ZnO UV detector

Cited by 160 publications

References 18 publications

Hybrid ultraviolet photodetectors with high photosensitivity based on TiO2 nanorods array and polyfluorene

Hybrid ultraviolet photodetectors with high photosensitivity based on TiO2 nanorods array and polyfluorene

Preparation of surface-modified ZnO quantum dots through an ultrasound assisted sol–gel process

Electrical properties of undoped bulk ZnO substrates

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