The fabrication and research Of 4H-Sic Schottky metal-semiconductor-metal ultraviolet photodetectors

Abstract

The fabrication and characterization of 4H-SiC Schottky metal-semiconductor-metal(MSM) photodetectors are reported in this paper. The current-voltage(I-V), capacitance voltage(C-V) and spectral response characterization of the photodetectors are measured at room temperature. The dark current is 1.24xlO-8A at 4V bias, and the average capacitance is 82.66pF at 0-5V voltage range. The spectral response range is from 250nm to 350nm wavelength, and the highest responsivity appears at the wavelength of 280nm. The results indicate that the 4H-SiC photodetectors are visible-blind. Keywords-4H-SiC; ultraviolet(UV) photodetector; metal semiconductor-metal (MSM) I.