The Fabrication of Ag Islands on AlN/GaN/AlN/Si(111) by Using Thermal Evaporator and Thermal Annealing Methods

Abstract

In this paper, we studied growth of AlN/GaN/AlN on Si (111) by using plasma assisted molecular beam epitaxy (PA-MBE) system. The structural and optical characteristics of the sample have been investigated by using high resolution X-ray diffraction (HR-XRD), Raman spectroscopy and photoluminescence (PL). PL spectrum of the sample has shown sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good crystal quality of the sample. The silver (Ag) metal contact was then deposited on the sample followed by thermal treatment at 500°C and 700°C, respectively. Treated sample at 700°C showed good spherical Ag islands on sample compared to the treated sample at 500°C. The effect of Ag islands on the electrical characteristics of sample was also examined by usingI-Vmeasurement. The results showed that the treated sample at 700°C has decreased the photo-current of Schottky diode.

Ni/Ag Schottky contacts on Al0.11Ga0.89N grown on Si (1 1 1) substrate by plasma-assisted MBE

“…Therefore, samples with fabricated Ni/Ag on Al 0.11 Ga 0.89 N/GaN/AlN/Si (1 1 1) were able to be annealed until 800°C which allows for further investigation of the electrical properties and surface morphologies of the samples. Currently, our group presented the effects of thermal annealing on Ni contact, Ni/Ag contact, and Ag contact on GaN pn-junction and AlN heterostructures grown on Si (1 1 1) substrate, [7][8][9] respectively. In this work, the characteristics of Ni/Ag-based bi-layer contacts on the Al 0.11 Ga 0.89 N on Si (1 1 1) substrate have been studied.…”