The Fabrication of an Applicative Device for Trench Width and Depth Using Inductively Coupled Plasma and the Bulk Silicon Etching Process

Abstract

In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to SiO 2 in SF 6 /O 2 plasma. The etch rate of the Si film was decreased on adding O 2 gas, and the selectivity of Si to SiO 2 was increased, on adding O 2 gas to the SF 6 plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of SF 6 /O 2 (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.

In-Situ Tem Plasma Chip Nanofabrication and Characterization

“…The benefit from easily controlled electrical field and electric force is that ions can be accelerated by the electric field and shoot against the etching target vertically. 5 Thus, trenches with a vertical sidewall can be fabricated using plasma etching. Recently, the directional property of inductively coupled plasma (ICP) etching was employed to fabricate trenches with a large depth-to-width ratio and smooth sidewall for device isolation purpose.…”

“…where NA is the Avagadro constant (6.02×10 23 /mol). 33 From Equation 2.5, Na is 4.816×10 24 /m 3 in room temperature (300°K) and at 1 atm pressure, given 1 atm= 1×10 5 Pa. Because the first ionization energy of Ar is 15.76 eV 34 , which is well above the range of cold plasma…”