2023
DOI: 10.3390/cryst13060873
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The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Application in Water Splitting

Abstract: The adjustable bandgap, single crystal structure, and strong chemical inertness of GaN materials make them excellent candidates for water splitting applications. The fabrication of GaN nanostructures can enhance their water splitting performance by increasing their surface area, improving photon absorption, and accelerating photocatalytic reactions. Developing cost-effective methods to fabricate GaN nanostructures is crucial to promote the development of GaN-based materials in water splitting applications. In … Show more

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Cited by 3 publications
(2 citation statements)
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“…Similarly, several n-type (CdS, CdSe) [ 32 , 33 ] and p-type (CIS, CIGS) [ 34 , 35 ] chalcogenides, nitrides (TaN, GaN) [ 36 , 37 ], phosphides (InP) [ 38 ], and Cu 2 Os [ 39 ] have been explored for solar water splitting applications, owing this to their narrow bandgap that absorbs sufficient visible light and well-matched band edge positions concerning overall water splitting potential. However, these materials suffer from poor stability and thus require catalytic support, coatings for improved stability, and long-term operation [ 38 , 39 , 40 , 41 , 42 , 43 ].…”
Section: Photoelectrochemical Water Spittingmentioning
confidence: 99%
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“…Similarly, several n-type (CdS, CdSe) [ 32 , 33 ] and p-type (CIS, CIGS) [ 34 , 35 ] chalcogenides, nitrides (TaN, GaN) [ 36 , 37 ], phosphides (InP) [ 38 ], and Cu 2 Os [ 39 ] have been explored for solar water splitting applications, owing this to their narrow bandgap that absorbs sufficient visible light and well-matched band edge positions concerning overall water splitting potential. However, these materials suffer from poor stability and thus require catalytic support, coatings for improved stability, and long-term operation [ 38 , 39 , 40 , 41 , 42 , 43 ].…”
Section: Photoelectrochemical Water Spittingmentioning
confidence: 99%
“…Moreover, the utilization of such photocathodes is limited due to the poor charge diffusion/catalysis, stability, and toxic nature, respectively [45][46][47]. In addition, several strategies have been used to enhance the PEC properties of semiconductors, which Similarly, several n-type (CdS, CdSe) [32,33] and p-type (CIS, CIGS) [34,35] chalcogenides, nitrides (TaN, GaN) [36,37], phosphides (InP) [38], and Cu 2 Os [39] have been explored for solar water splitting applications, owing this to their narrow bandgap that absorbs sufficient visible light and well-matched band edge positions concerning overall water splitting potential. However, these materials suffer from poor stability and thus require catalytic support, coatings for improved stability, and long-term operation [38][39][40][41][42][43].…”
Section: Photoelectrochemical Water Spittingmentioning
confidence: 99%