2020
DOI: 10.1016/j.apsusc.2019.144154
|View full text |Cite
|
Sign up to set email alerts
|

The feasibility analysis of growing the modified borophene on substrates: First-principles calculation

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2022
2022
2023
2023

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(1 citation statement)
references
References 49 publications
0
1
0
Order By: Relevance
“…On the theoretical aspect, abundant efforts have been devoted to find the stable atomic configurations and extraordinary properties of bilayer borophene. Multiple boron bilayer sheets with different concentrations and distributions of pillars and hexagonal holes can effectively balance the excess electrons and are predicted to be stable under dynamic and thermal conditions, in which the lowest formation energy is only 0.35 eV/atom and much smaller than that of 0.50 eV/atom in its g 1/8 -sheet monolayer counterpart . The effect of substrates on bilayer borophene cannot be ignored when determining the stacking styles and the electronic properties. The inert substrates of hexagonal boron nitride, MoS 2 and metal Al(111) with tiny tunneling barrier at the interface of the borophene–substrate systems have been predicted and are advantageous to the efficiency of carrier injection . More interestingly, a novel topological state semimetal against the impurities is found in bilayer borophene, and the robust metallic is unaffected by the change of symmetry .…”
Section: Introductionmentioning
confidence: 99%
“…On the theoretical aspect, abundant efforts have been devoted to find the stable atomic configurations and extraordinary properties of bilayer borophene. Multiple boron bilayer sheets with different concentrations and distributions of pillars and hexagonal holes can effectively balance the excess electrons and are predicted to be stable under dynamic and thermal conditions, in which the lowest formation energy is only 0.35 eV/atom and much smaller than that of 0.50 eV/atom in its g 1/8 -sheet monolayer counterpart . The effect of substrates on bilayer borophene cannot be ignored when determining the stacking styles and the electronic properties. The inert substrates of hexagonal boron nitride, MoS 2 and metal Al(111) with tiny tunneling barrier at the interface of the borophene–substrate systems have been predicted and are advantageous to the efficiency of carrier injection . More interestingly, a novel topological state semimetal against the impurities is found in bilayer borophene, and the robust metallic is unaffected by the change of symmetry .…”
Section: Introductionmentioning
confidence: 99%