The flexible compact SOI-MOSFET model HiSIM-SOI valid for any structural types

Miyake, M.; Kusu, S.; Kikuchihara, Hideyuki; Tanaka, A.; Shintaku, Yasuhiro; Ueno, M.; Nakashima, Junichi; Feldmann, U.; Mattausch, H. J.; Miura-Mattausch, Mitiko; Takaki, Yoshida

doi:10.1109/sispad.2011.6034968

Cited by 5 publications

(1 citation statement)

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“…The model [5] widely used by industries solves the FB potential through iteration by the SPICE circuit simulator with body-source built-in potential lowering [6]. Other approaches have proposed to solve the accumulated charge [7] through three equations [8] iteratively, or to solve the front-and back-gate surface potentials through its coupling effect for modeling FBEs in SOI MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Floating-Body Effect in Partially/Dynamically/Fully Depleted DG/SOI MOSFETs Based on Unified Regional Modeling of Surface and Body Potentials

Chiah

Zhou

2014

IEEE Trans. Electron Devices

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A compact terminal current/charge model for partially/dynamically/fully depleted (PD)/(DD)/(FD) double-gate (DG) and silicon-on-insulator (SOI) MOSFETs with floating-body (FB) effect based on unified regional modeling of the surface and body potentials is presented. The model accurately describes the physical behavior of the impact-ionization current that gives rise to the hump in the C-V characteristics and the body thicknessand doping-dependent kink effect. The FB potential at the zerofield location in the body is the key to model the electrical characteristics of PD/DD/FD devices with complete body doping and thickness scalability. The model is validated by comparison with I-V and C-V data of the numerical devices in a given range of body doping, body thickness, and temperature. Such a scalable model is important for physical and variability modeling of DG/SOI FinFETs with doped body. Index Terms-Compact model (CM), double gate (DG), dynamically depleted (DD), floating body (FB), fully depleted (FD), impact ionization, MOSFET, partially depleted (PD), silicon-on-insulator (SOI), surface potential, unified regional modeling (URM).

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Section: Introductionmentioning

confidence: 99%