The formation of anomalous Hall effect depending on W atoms in ZnO thin films

Can, Musa Mutlu; Shah, S. İsmat; Fırat, Tezer

doi:10.1016/j.apsusc.2014.02.079

Cited by 4 publications

(1 citation statement)

References 58 publications

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“…Despite these encouraging findings, origin of MR particularly positive MR at low temperatures in several ZnO based compounds is still controversial and lead researchers to look for the existence of nonlinearity in the Hall resistance. Nonlinearity in field dependent Hall resistivity is reported to have its origin in magnetic ordering and is identified as anomalous Hall effect (AHE) [3,14].…”

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confidence: 99%

Sign reversal of magnetoresistance and p to n transition in Ni doped ZnO thin film

Agrawal¹,

Darb²,

Choudhary³

et al. 2017

Preprint

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We report the magnetoresistance and nonlinear Hall effect studies over a wide temperature range in pulsed laser deposited Ni0.07Zn0.93O thin film. Negative and positive contributions to magnetoresistance at high and low temperatures have been successfully modeled by the localized magnetic moment and two band conduction process involving heavy and light hole subbands, respectively. Nonlinearity in the Hall resistance also agrees well with the two channel conduction model. A negative Hall voltage has been found for T≥50 K, implying a dominant conduction mainly by electrons whereas positive Hall voltage for T<50 K shows hole dominated conduction in this material. Crossover in the sign of magnetoresistance from negative to positive reveals the spin polarization of the charge carriers and hence the applicability of Ni doped ZnO thin film for spintronic applications.

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confidence: 99%