2006
DOI: 10.1016/j.tsf.2005.07.178
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The formation of hetero-junction using carbon alloys by hot-wire CVD method

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Cited by 6 publications
(3 citation statements)
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“…Note that this obtained V oc is the highest value for conventional amorphous silicon based solar cells using other window-layer such as B-doped a-Si 1Àx C x films fabricated in our laboratory. 10,11) We considered that the high V oc obtained is attributed to the high built-in field caused by the wide band gap and the high doping efficiency of mc-3C-SiC:H. Table I summarizes the dark conductivities, the activation energies, and the optical band gaps of phosphorus-doped (P-doped) n-type silicon-related materials (a-Si 1Àx C x , mc-Si:H, mc-3C-SiC:H) prepared by HWCVD method in our laboratory. We found that P-doped a-Si 1Àx C x had a lower conductivity and higher activation energy than mc-Si:H and mc-3C-SiC:H. Thus, it seems to be difficult to apply the P-doped a-Si 1Àx C x films as the doping layer of solar cells to obtain a high built-in potential.…”
Section: Discussionmentioning
confidence: 99%
“…Note that this obtained V oc is the highest value for conventional amorphous silicon based solar cells using other window-layer such as B-doped a-Si 1Àx C x films fabricated in our laboratory. 10,11) We considered that the high V oc obtained is attributed to the high built-in field caused by the wide band gap and the high doping efficiency of mc-3C-SiC:H. Table I summarizes the dark conductivities, the activation energies, and the optical band gaps of phosphorus-doped (P-doped) n-type silicon-related materials (a-Si 1Àx C x , mc-Si:H, mc-3C-SiC:H) prepared by HWCVD method in our laboratory. We found that P-doped a-Si 1Àx C x had a lower conductivity and higher activation energy than mc-Si:H and mc-3C-SiC:H. Thus, it seems to be difficult to apply the P-doped a-Si 1Àx C x films as the doping layer of solar cells to obtain a high built-in potential.…”
Section: Discussionmentioning
confidence: 99%
“…Industries dealing with these products demand low cost alumina films in addition to low temperature deposition on organic materials. These requirements may be satisfied by Cat-CVD which has such merits as film formation with no plasma induced-damages, low equipment cost and low temperature process [17][18][19][20][21][22][23][24][25]. However, alumina formation process requires catalyzer materials with resistance to oxidation.…”
Section: Introductionmentioning
confidence: 99%
“…Recently much improved and sophisticated versions of CVD such as hot filament CVD, radio frequency (RF) plasma CVD (5,6) and micro-surface (MS)-wave plasma CVD (7,8) have been applied for thin film deposition and doping purposes. Hot filament CVD was found to be useful for rapid and time saving film depositions (9). Pyrolysis of synthetic precursors such as polyfurfuryl alcohol, acetylene and natural precursors (10) such as different, plant fibers, resins, oils, etc., can give carbon nanomaterial.…”
Section: Introductionmentioning
confidence: 99%