The formation of light emitting cerium silicates in cerium-doped silicon oxides

Li, Jing; Zalloum, O. H. Y.; Roschuk, Tyler; Heng, Chenglin; Wójcik, J.; Mascher, P.

doi:10.1063/1.3067871

Cited by 36 publications

(50 citation statements)

References 19 publications

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“…We have previously reported on the photoluminescence and structure of Tb and Ce-doped silicon rich silicon oxides (SRSO) and oxygen rich silicon oxides (ORSO) (17,18). The luminescent behavior of Tb-doped ORSO and SRSO samples considered in this work is summarized in Figure 1.…”

Section: Resultsmentioning

confidence: 99%

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Structure and Luminescence of Rare Earth-doped Silicon Oxides Studied Through XANES and XEOL

Roschuk¹,

Wilson²,

Li³

et al. 2009

ECS Trans.

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Luminescent Si-based materials are of significant interest due to their potential applications in the fields of photonics and solid state lighting. The use of rare earth dopants incorporated into Si-based materials allows the attainment of specific wavelengths of emission for color tunability. Details of the RE luminescence and even the ability to obtain luminescence are strongly dependent on the composition and structure of the Si-based host material. Through the use of X-ray absorption spectroscopy details of the atomic bonding environment of the films has been obtained. X-ray excited optical luminescence, measured after excitation at the absorption edges of the constituent atoms within these materials, reveals that excitation of the rare earth ions occurs primarily at energies related to oxygen states.

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Section: Resultsmentioning

confidence: 99%

“…The sample compositions are given in Table 1. Further details of the deposition system, film growth and structure have previously been discussed (16)(17)(18). Post-deposition, the films were subjected to high temperature annealing in a quartz tube furnace under flowing N 2 at temperatures up to 1200 C for 60 minutes.…”

Section: Sample Fabrication and Processingmentioning

confidence: 99%

Structure and Luminescence of Rare Earth-doped Silicon Oxides Studied Through XANES and XEOL

Roschuk¹,

Wilson²,

Li³

et al. 2009

ECS Trans.

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“…However, there are some drawbacks for some conventional synthesis processes. For example, these are incompatible with standard Si processing technologies [3]. Furthermore, some research has demonstrated that the luminescence properties of Ce ions varied as materials were prepared via different processes, and there is yet no doubtless conclusion about the relationship between the luminescence properties and the environment structures.…”

Section: Introductionmentioning

confidence: 99%

“…This situation contradicts the fact that the radiative oxide defects tend to be eliminated during annealing process. Furthermore, in view of the forementioned relationship between the PL intensity and Ce concentrations, therefore, the Ce 3þ ions are the major contributors to this broad PL band which is the characteristic emissions of 5d [3,14].…”

Section: Introductionmentioning

confidence: 99%

“…Luminescence rare earth (RE) doped silicon (Si) based materials, as a promising candidate for light emitting sources, have attracted significant interest over the past several years due to the enormous potential usefulness as Si-based luminescence devices for integrated optoelectronics [1][2][3]. The RE metal ions are often used as activator ions to improve the luminescence properties of silicon oxide due to their special electronic structures.…”

Section: Introductionmentioning

confidence: 99%

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Effects of Ce concentrations, annealing conditions and fabrication processes on the photoluminescence properties of Ce‐doped silica films

Cong

Zheng

et al. 2012

Physica Status Solidi (b)

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Ce-doped silica films with various Ce concentrations were prepared via ion beam sputtering (IBS) and ion implantation. The samples containing 1.46 at.% Ce were annealed at various temperatures from 500 to 1100 8C in air ambient and a separate sample with the same Ce concentration was annealed at 1100 8C in nitrogen gas. The Ce-related photoluminescence (PL) was observed for the samples and found to be sensitive to the Ce concentrations, annealing conditions and fabricating processes. The PL intensity increases with increasing Ce concentrations from 0.09 to 0.58 at.%, and the concentration-induced quenching effect occurred as the Ce concentrations reached 1.46 at.%. Also, the PL intensity is enhanced as the samples were annealed at various temperatures from 500 to 900 8C in air ambient, then decreases remarkably as the annealing temperature reached 1100 8C. In addition, compared with the sample annealed in air, the PL intensity can be enhanced for the sample annealed in nitrogen gas. Distinctive PL spectra were found for the samples prepared via different processes.

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Lighting Applications of Rare Earth‐Doped Silicon Oxides

Roschuk

Wójcik

et al. 2010

Silicon Nanocrystals

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Silicon nanoclusters (Si-ncs) are of substantial interest as they play a significant role in the development of Si-based light sources [1,2]. One of the main application areas is in integrated photonics for telecommunications and computing; however, there is also a substantial market for the use of these materials in lighting and displays. Lighting accounts for approximately 20% of the $60 billion electricity market in the United States [3]. The potential to tap this market, combined with the inefficiency of incandescent bulbs, has driven research over the past decades in the area of solidstate lighting (SSL). The market for both incandescent and fluorescent light sources has been steadily dwindling with a shift toward the development of more efficient, cheaper, and environment friendly alternatives, such as SSL [4,5]. In 2007, the market for LED lighting was estimated at $330 million (a 60% increase over the previous year) and is projected to grow to $1.4 billion by 2012 [6].As with light sources for integrated photonics, the SSL market relies primarily on III-V, II-VI, or phosphor-based materials and, more recently, organic light emitting diodes (OLEDs) [5]. With the ability to attain efficient luminescence in Si-nc-based systems, however, the possibility of an all-Si approach has become attractive. Such an approach would allow manufacturers to use of the same large-scale production and processing facilities as used by the microelectronics and solar cell industries while maintaining low cost. There are two performance metrics generally of interest for solid-state lighting, the performance (in lumens) per dollar and the performance per watt (efficacy). Figure 17.1 illustrates these metrics for several common lighting sources. While LED and OLED technologies currently lead in terms of efficacy, recently explored RE-doped silicon-based materials (shown on the graph as Rare Earth Films) have a clear advantage in terms of the performance per dollar (data courtesy of Group IV Semiconductor Inc.). Furthermore, integration with the necessary electronics for driving Si-based lighting cells or pixels would then be easily achieved due to the use of a Si-platform. In particular, the use of rare earth dopants to attain specific colored emissions for mixing to obtain white light presents a viable pathway to Si-based lighting. Such an approach borrows from that commonly used with color-converting phosphors, where rare earths are routinely used, while incorporating the rare earth elements into a silicon-based host for the advantages in fabrication.

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The formation of light emitting cerium silicates in cerium-doped silicon oxides

Cited by 36 publications

References 19 publications

Structure and Luminescence of Rare Earth-doped Silicon Oxides Studied Through XANES and XEOL

Structure and Luminescence of Rare Earth-doped Silicon Oxides Studied Through XANES and XEOL

Effects of Ce concentrations, annealing conditions and fabrication processes on the photoluminescence properties of Ce‐doped silica films

Lighting Applications of Rare Earth‐Doped Silicon Oxides

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