The formation of stable ohmic contacts to MBE grown CdTe layers

Yousaf, Muhammad; Sands, David; Scott, C.G.

doi:10.1016/s0038-1101(00)00024-1

Cited by 2 publications

(3 citation statements)

References 18 publications

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“…5for W and Eqs. (6,7) for E C we can numerically calculate the I-V dependence for the current across the whole system. The above equations contain too many free parameters, and the information contained in a single I-V curve is obviously insufficient to obtain the parameters from a fitting procedure.…”

Section: Theoretical Background and Fitting Algorithmmentioning

confidence: 99%

“…We then find E 0 by solving Eqs. (7) and (8) with V=V RT , and R S =0. This allowed us to calculate N D from Eq.…”

Section: Theoretical Background and Fitting Algorithmmentioning

confidence: 99%

“…We find that to explain the shape of our I-V curves, we must assume the existence of a very thin (10-100 nm) insulating layer (residual oxide layer) between the contact and the semiconductor material, which could be formed before or after metal contacts are deposited [7][8][9][10][11][12]. To include the effects of an interfacial layer in the Schottky barrier model, Wu [14] developed a combined interfacial layer-thermionic-diffusion (ITD) model.…”

Section: Introductionmentioning

confidence: 99%

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Properties of Pt Schottky type contacts on high-resistivity CdZnTe detectors

Bolotnikov¹,

Boggs²,

Chen³

et al. 2002

Nuclear Instruments and Methods in Physics Research Section A:

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In this paper we present studies of the I-V characteristics of CdZnTe detectors with Pt contacts fabricated from highresistivity single crystals grown by the high-pressure Brigman process. We have analyzed the experimental I-V curves using a model that approximates the CZT detector as a system consisting of a reversed Schottky contact in series with the bulk resistance. Least square fits to the experimental data yield 0.78-0.79 eV for the Pt-CZT Schottky barrier height, and <20 V for the voltage required to deplete a 2 mm thick CZT detector. We demonstrate that at high bias the thermionic current over the Schottky barrier, the height of which is reduced due to an interfacial layer between the contact and CZT material, controls the leakage current of the detectors. In many cases the dark current is not determined by the resistivity of the bulk material, but rather the properties of the contacts; namely by the interfacial layer between the contact and CZT material.

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Section: Theoretical Background and Fitting Algorithmmentioning

confidence: 99%

“…We then find E 0 by solving Eqs. (7) and (8) with V=V RT , and R S =0. This allowed us to calculate N D from Eq.…”

Section: Theoretical Background and Fitting Algorithmmentioning

confidence: 99%