2018
DOI: 10.1016/j.matlet.2018.06.003
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The formation of tungsten and tungsten carbides by CVD synthesis and the proposed mechanism of chemical transformations and crystallization processes

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Cited by 23 publications
(19 citation statements)
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“…The surface configuration would be changed due to either the surface reconstruction or the microwave plasma surface etching effect. [ 33–35 ] According to the carbonization of metals and the chemical reactions of the C and H groups (e.g., [CH 3 ], [C 2 H 2 ]), we propose the chemical reactions of the W top layer with the mixed gases of CH 4 and H 2 in the process of the MPCVD synthesis2W(s)+C(s)normalW2C(s)normalW2C(s)+2C(s)2WC(s)W(s)+C(s)WC(s)2W(s)+[CH3](g)normalW2C(s)+3[H](g)normalW2C(s)+[CH3](g)2WC(s)+3[H](g)4W<...…”
Section: Discussionmentioning
confidence: 99%
“…The surface configuration would be changed due to either the surface reconstruction or the microwave plasma surface etching effect. [ 33–35 ] According to the carbonization of metals and the chemical reactions of the C and H groups (e.g., [CH 3 ], [C 2 H 2 ]), we propose the chemical reactions of the W top layer with the mixed gases of CH 4 and H 2 in the process of the MPCVD synthesis2W(s)+C(s)normalW2C(s)normalW2C(s)+2C(s)2WC(s)W(s)+C(s)WC(s)2W(s)+[CH3](g)normalW2C(s)+3[H](g)normalW2C(s)+[CH3](g)2WC(s)+3[H](g)4W<...…”
Section: Discussionmentioning
confidence: 99%
“…The chemical vapor-phase synthesis (CVS) of WC powder refers to the preparation of WC powders via hydrogen and hydrocarbon vapor reduction precursors (Dushik et al, 2018). If WCl 6 is used as a precursor, CH 4 and hydrogen are taken as the C source and reducing agent, respectively, and the reaction temperature is set to 1200 • C, the following reaction takes place (Aneela and Srikanth, 2018):…”
Section: Vapor-phase Methodsmentioning
confidence: 99%
“…To date, many types of 2D materials, such as nitrides, [ 174 , 175 ] carbides, [ 176 , 177 ] oxides, [ 178 , 179 ] etc., and their heterostructures, [ 180 , 181 ] have been successfully prepared under CVD conditions. It should be noted that the CVD growth method needs only very simple equipment to reach precisely controllable experimental parameters, such as temperature, atmosphere, and pressure, which enable CVD to be the most widely employed fabrication method for the growth of 2D and other thin‐film materials.…”
Section: Construction Of 2d Superlattice Materialsmentioning
confidence: 99%