The frequency dependent complex dielectric and electric modulus properties of Au/P3HT/n-Si (MPS) Schottky barrier diode (SBD)

Yükseltürk, Esra; Bengi, S.

doi:10.1007/s10854-023-10983-w

Cited by 3 publications

(3 citation statements)

References 45 publications

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“…Similar results were also reported in the literature by various researches in recently on the interfacial layer effects on the performance these devices [36][37][38].…”

Section: Dielectric Propertiessupporting

confidence: 91%

Frequency-dependent dielectric, electric modulus, and ac conductivity features of Au/n-Si Schottky diodes (SDs) with PVC and (PVC:Graphite/Graphene-Oxide) interlayer

Altındal Yerişkin,

Taşçıoğlu,

Badali

2024

J. Phys. D: Appl. Phys.

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To determine the interlayer effect on dielectric features and conductivity, Au/n-Si (S0), Au/PVC/p-Si (S1), and Au/PVC:Gt-GO/p-Si (S2) type SDs were grown onto the same n-Si wafer and their admittance measurements performed between 100 Hz and 1 MHz. The observed decrease in C and G/ω values as frequency increases shows that the charges at the interface-states (N ss) can easily follow ac-signal and supply an excess capacitance and conductance at lower frequencies. Using C and G/ω data at 1.5 V, the dielectric-constant (ϵ′), dielectric-loss (ϵ″), and loss-tangent (tan δ) were obtained as a function of frequency. To determine the relaxation processes in (PVC:Gt-GO) nanocomposite, complex-dielectric (M′ and M′′) formalism was also explored in the whole frequency range. The value of ac electrical conductivity (σ ac) remained independent of frequency until 0.1 MHz and then started to increase exponentially which corresponds to dc and ac conductivity. As compared to S1 and S2 with So SD, the conductivity and ϵ′ values increase due to the PVC and (PVC:Gt-GO) interlayer. The Ln(σ ac)-Ln(ω) plots were also drawn to analyze the conduction process and their slopes were found as 0.09, 0.39, and 0.58 for S0, S1, and S2 SD, respectively. These results show that the interaction and trap levels of the electron–hole pairs at lower frequencies, as well as from the well-localized relaxation mechanism at higher frequencies.

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“…Similar results were also reported in the literature by various researches in recently on the interfacial layer effects on the performance these devices [36][37][38].…”

Section: Dielectric Propertiessupporting

confidence: 91%

Frequency-dependent dielectric, electric modulus, and ac conductivity features of Au/n-Si Schottky diodes (SDs) with PVC and (PVC:Graphite/Graphene-Oxide) interlayer

Altındal Yerişkin,

Taşçıoğlu,

Badali

2024

J. Phys. D: Appl. Phys.

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“…As a result, the falling rate of capacitance decreases with the decrease in voltage and the 1 𝐶 − 𝑉 ⁄ plots are deflected. The capacitance of an SBD is given as follows [34]:…”

Section: Resultsmentioning

confidence: 99%

“…The depletion of the mesa region is attributed to the depletion of the MOS structure in the sidewall and Schottky contact structure in the top of the devices. Owing to the slower The capacitance of an SBD is given as follows [34]:…”

Section: Resultsmentioning

confidence: 99%

Large-Scale β-Ga2O3 Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage

He,

Zhou,

Liu

et al. 2023

Electronics

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β-Ga2O3 Schottky barrier diodes (SBDs) suffer from the electric field crowding and barrier height lowering effect, resulting in a low breakdown voltage (BV) and high reverse leakage current. Here, we developed β-Ga2O3 trench MOS-type Schottky barrier diodes (TMSBDs) on β-Ga2O3 single-crystal substrates with halide vapor phase epitaxial layers based on ultraviolet lithography and dry etching. The 1/C2−V plots are deflected at 2.24 V, which is caused by the complete depletion in the mesa region of the TMSBDs. A close-to-unity ideality factor of 1.02 and a low turn-on voltage of 0.72 V are obtained. This is due to the low interface trap density in the metal/semiconductor interface of TMSBDs, as confirmed by the current–voltage (I–V) hysteresis measurements. The specific on-resistance calculated with the actual Schottky contact area increases as the area ratio (AR) increases because of the current spreading phenomenon. Furthermore, the reverse leakage current of the TMSBDs is smaller and the BV is increased by 120 V compared with the regular SBD. This work paves the way for further improving the overall performance of β-Ga2O3 TMSBDs.

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Optimizing optoelectronics performance: theoretical and experimental study on ZnO thin film for Al/ZnO/p-Si photodiode

Karaca,

Yıldız,

Yıldırım

2024

Phys. Scr.

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In this study investigates the optimization of ZnO thin film photoelectric devices, specifically focusing on ZnO/p-Si heterojunction photosensitive devices and photodiodes (PDs) using Al contacts. Through an experimental and theoretical analysis approach aims to evaluate the effects of important parameters, including ZnO layer thickness, defect density, and contact materials, on PD’s efficiency. Numerical analysis simulations comparatively examine the experimentally fabricated device performance at a 5 nm ZnO layer thickness by balancing photon absorption and carrier formation while minimizing carrier transport limitations. Experimentally process, an Atomic Layer Deposition (ALD) system was used to grow ZnO interlayers on one side of the polished Si wafer. Then, Al metallic contacts were created on the ZnO layers using a hole array mask. The PDs were then subjected to electrical characterization using I-V and I-t measurements under various illumination densities. Al/ZnO/p-Si PD's device with active performance has been produced and analyzed with electrical parameters such as barrier height, photocurrent, spectral response, ideality factor and EQE were derived, analyzed and studied. In conclusion, this work provides a comprehensive understanding of the performance of Al/ZnO/p-Si PD at varying illumination intensities and offering a detailed analysis of key parameters influencing device efficiency for future optoelectronics applications.

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The frequency dependent complex dielectric and electric modulus properties of Au/P3HT/n-Si (MPS) Schottky barrier diode (SBD)

Cited by 3 publications

References 45 publications

Frequency-dependent dielectric, electric modulus, and ac conductivity features of Au/n-Si Schottky diodes (SDs) with PVC and (PVC:Graphite/Graphene-Oxide) interlayer

Frequency-dependent dielectric, electric modulus, and ac conductivity features of Au/n-Si Schottky diodes (SDs) with PVC and (PVC:Graphite/Graphene-Oxide) interlayer

Large-Scale β-Ga2O3 Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage

Optimizing optoelectronics performance: theoretical and experimental study on ZnO thin film for Al/ZnO/p-Si photodiode

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