The frequency noise and spectral linewidth in semiconductor ring lasers

This paper discusses the phenomena of proteresis, commonly known as inverse hysteresis, and the various methods to implement it. Proteresis generates an advanced response when compared to hysteresis, which improves the system’s speed, maintaining the noise immunity intact. This feature of proteresis is seen in multiple naturally occurring phenomena. The paper implements proteresis in domains of electronics and optics, keeping in view essential constraints like area, power, throughput, and speed. The electronic domain consists of two models, one using CMOS circuits and the other using discrete components. The transistor-level design of a proteretic device is on 180nm CMOS technology, and proof of concept is demonstrated using post-layout simulations. This design is operated on a supply voltage of 1.8V and consumes significantly less power of 633μW at a moderate frequency of 10MHz. The second implementation utilizes discrete components wherein the operational amplifier (op-amp) is utilized to realize the proteretic design. A discussion on the boundary conditions for switching from hysteretic to proteretic is also presented. This design operates at a supply voltage of 12V from -6V to +6V and has a high drive current. Finally, the third implementation is in the optical field using Semiconductor Ring Lasers (SRL). Rate equations are used to model SRL’s and injection locking phenomenon is applied for switching, which is used for high-speed operations.

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Proteretic device: modelling and implementation in electronics and optical domain

Khan¹,

Azeemuddin²,

Sohel³

2022

Semicond. Sci. Technol.

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The frequency noise and spectral linewidth in semiconductor ring lasers

Cited by 1 publication

References 13 publications

Proteretic device: modelling and implementation in electronics and optical domain

Proteretic device: modelling and implementation in electronics and optical domain

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