The FTIR studies of SnO2:Sb(ATO) films deposited by spray pyrolysis

Zhang, B.; Tian, Yuan; Zhang, J.X.; Cai, Weiping

doi:10.1016/j.matlet.2011.01.052

Cited by 61 publications

(24 citation statements)

References 14 publications

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“…For better visual guidance, all the spectra were normalized with the same intensity for the Si-O v band at 612.5 cm−1. The spectra peaks present at 245, 282.5, and 612.5 cm−1 are assigned to the Sn-O vibration [35,54], while a peak at 468.92 cm−1 is assigned to Sn-O-Sn stretching. Even though there was no independent peak observed which could be assigned to aluminum, Al incorporation has an influence on the broadening of Sn-O-Sn peaks and leads to a decrease of the relative intensity of the Sn-O-Sn stretching mode.…”

Section: Resultsmentioning

confidence: 99%

SnO2 Films Deposited by Ultrasonic Spray Pyrolysis: Influence of Al Incorporation on the Properties

et al. 2019

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Aluminum-doped tin oxide (SnO 2:Al) thin films were produced by an ultrasonic spray pyrolysis method. The effect of aluminum doping on structural, optical, and electrical properties of tin oxide thin films synthesized at 420 ∘C was investigated. Al doping induced a change in the morphology of tin oxide films and yielded films with smaller grain size. SnO 2 thin films undergo a structural reordering and have a texture transition from (301) to (101), and then to (002) preferred cristallographic orientation upon Al doping. The lattice parameters (a and c) decreases with Al doping, following in a first approximation Vegard’s law. The optical transmission does not change in the visible region with an average transmittance value of 72–81%. Conversely, in the near infrared (NIR) region, the plasmon frequency shifts towards the IR region upon increasing Al concentration in the grown films. Nominally undoped SnO 2 have a conductivity of ∼1120 S/cm, which is at least two orders of magnitude larger than what is reported in literature. This higher conductivity is attributed to the Cl- ions in the SnCl 4.5(H 2 O) precursor, which would act as donor dopants. The introduction of Al into the SnO 2 lattice showed a decrease of the electrical conductivity of SnO 2 due to compensating hole generation. These findings will be useful for further studied tackling the tailoring of the properties of highly demanded fluorine doped tin oxide (FTO) films.

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Section: Resultsmentioning

confidence: 99%

SnO2 Films Deposited by Ultrasonic Spray Pyrolysis: Influence of Al Incorporation on the Properties

et al. 2019

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“…37 V, 38 and Sb. 39,40 Antimony-doped SnO 2 in particular constitutes a promising candidate as it exhibits quasimetallic conductivity maintaining at the same time its transparency in the visible range.…”

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confidence: 99%

Solution processed SnO₂:Sb transparent conductive oxide as an alternative to indium tin oxide for applications in organic light emitting diodes

Esro

Georgakopoulos

et al. 2016

J. Mater. Chem. C

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“…ATO 코팅막을 제조하기 위해서 sol-gel [4,5], sputtering [6][7][8], spray pyrolysis [9,10], laser deposition [11,12], plasma [13], oblique angle deposition [14] 참 고 문 헌…”

Section: 서 론unclassified

Fabrication of ATO thin film for IR-cut off by sol-gel method

Kim

Lee²,

Lee³

et al. 2013

Journal of the Korean Crystal Growth and Crystal Technology

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IR cut-off thin films consisted of ATO nanoparticles were successfully fabricated by sol-gel method. The coating solution was synthesized with organic/inorganic hybrid binder and ATO colloidal solution and ATO thin films were coated on a slide glass with the withdrawal speed of 5~40 mm/s. As the withdrawal speed increased from 5 mm/s to 40 mm/s, the thickness of coating thin films also increased from 1.05 µm to 4.25 µm and the IR cut-off in wavelength of 780~2500 nm increased from 49.5 % to 66.7 %. In addition, the pencil hardness of ATO thin films dried at 80 o C was ca. 5H and the coating films were not removed after a cross cutter tape test because of the hybrid binder synthesized with tetraethylorthosilicate and methyltrimethoxysilane. The surface morphologies, optical properties and film thickness of prepared thin films with a different withdrawal speed were measured by field emission scanning electron microscope (FE-SEM), UV-Vis spectrophotometer, and Dektak.

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The FTIR studies of SnO2:Sb(ATO) films deposited by spray pyrolysis

Cited by 61 publications

References 14 publications

SnO2 Films Deposited by Ultrasonic Spray Pyrolysis: Influence of Al Incorporation on the Properties

SnO2 Films Deposited by Ultrasonic Spray Pyrolysis: Influence of Al Incorporation on the Properties

Solution processed SnO₂:Sb transparent conductive oxide as an alternative to indium tin oxide for applications in organic light emitting diodes

Fabrication of ATO thin film for IR-cut off by sol-gel method

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The FTIR studies of SnO2:Sb(ATO) films deposited by spray pyrolysis

Cited by 61 publications

References 14 publications

SnO2 Films Deposited by Ultrasonic Spray Pyrolysis: Influence of Al Incorporation on the Properties

SnO2 Films Deposited by Ultrasonic Spray Pyrolysis: Influence of Al Incorporation on the Properties

Solution processed SnO2:Sb transparent conductive oxide as an alternative to indium tin oxide for applications in organic light emitting diodes

Fabrication of ATO thin film for IR-cut off by sol-gel method

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Solution processed SnO₂:Sb transparent conductive oxide as an alternative to indium tin oxide for applications in organic light emitting diodes