The future is MEMS design considerations of microelectromechanical systems at Bosch

Schwarz, Mike; Franz, J.; Reimann, Mathias

doi:10.1109/mixdes.2015.7208506

Cited by 14 publications

(5 citation statements)

References 2 publications

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“…With design simulations playing a major role in the decisionmaking process for new product development, it is very important that simulation models are reliable and able to capture the full sensor behavior with better accuracy and less computational time [19] - [20]. This work demonstrates that the non-linear behavior of a capacitive MEMS transducer can be precisely predicted using a combination of FEA and a behavioral circuit simulator tool, which uses hardware scripting language such as Verilog-A.…”

Section: Discussionmentioning

confidence: 99%

A Behavioral Non-Linear Modeling Implementation for MEMS Capacitive Microphones

SHUBHAM¹

2022

Preprint

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<p>We highlight the behavioral non-linear system-level modeling approach for MEMS capacitive microphones. The combination of the finite element modeling and the large signal non-linear circuit modeling provide a strong capability to predict electro-acoustic performance for capacitive transductions. The circuit simulator tool such as Cadence Virtuoso has emerged as a powerful tool in designing behavioral models both in linear as well as in non-linear regimes. Typical small signal lumped element models fail to capture the MEMS behavior which changes over pressure and bias conditions. The models described herein capture diaphragm displacement and capacitance change over large pressure ranges for a simply supported circular plate. This can be coupled with the electrostatic force, due to the applied bias voltage, and is converted back to pressure thereby realizing a feedback loop in the circuit model. The non-linear model capability is extended to predict capacitance-bias behavior and estimate pull-in of the MEMS device. The microphone sensitivity, signal-to-noise ratio and harmonic distortions are accurately predicted using the non-linear large signal model when compared with measured microphone data.</p>

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Section: Discussionmentioning

confidence: 99%

A Behavioral Non-Linear Modeling Implementation for MEMS Capacitive Microphones

SHUBHAM¹

2022

Preprint

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“…However, more parameters, including, e.g., a threshold voltage, DIBL, a subthreshold slope, and I ON and I OFF currents, have to be taken into account for the optimization of the SB devices. An optimization with a sensitivity strength analysis as reported in [40] would be desirable in terms of identification the optimal design parameters.…”

Section: Discussionmentioning

confidence: 99%

Analysis and Performance Study of III–V Schottky Barrier Double-Gate MOSFETs Using a 2-D Analytical Model

Schwarz

Kloes

2016

IEEE Trans. Electron Devices

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A comprehensive study and comparison of IV and III-V Schottky barrier (SB) double-gate MOSFETs using a universal analytical model and Synopsys TCAD Sentaurus is presented. Various impacts on the device performance have been identified, e.g., the SB height, the bandgap, the materialdependent carrier masses, and density-of-states affecting the ambipolar behavior and ON-current. The performance is analyzed with respect to the most important physical parameters and their impact on the device figure of merit. Ambipolar behavior is an important factor and must be carefully considered in the device design to aim a high I ON /I OFF ratio and comparable subthreshold slope to conventional MOSFET devices to benefit from the SB. This paper shows that the above listed parameters determine the bottleneck on the device performance. Index Terms-2-D Poisson equation, III-V MOSFET, analytical modeling, compact modeling, device modeling, doublegate (DG) MOSFET, Schottky barrier (SB), thermionic current, tunneling current. 0018-9383

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“…Continuous improvement of low-cost calibration techniques plays a key role in high-performance MEMS inertial systems [11]. Bias reduction in low-cost MEMS can be also achieved through better control of process variability [14]. Inertial sensors are also affected by output random noise, expressed in terms of its noise spectral density, measured in /√ for accelerometers, deg/ /√ for gyroscopes.…”

Section: B Limits and Research Trends Of Automotive Inertial Memsmentioning

confidence: 99%

Is Consumer Electronics Redesigning Our Cars?: Challenges of Integrated Technologies for Sensing, Computing, and Storage

Pieri

Zambelli

Nannini

et al. 2018

IEEE Consumer Electron. Mag.

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The paper critically analyzes the trends and limits of integrated technologies for sensing, computing and data storage when devices and systems, originally developed for consumer electronics, are used for self-driving cars. Some hints, supported by theoretical analysis and experimental measures, are provided to overcome the issues of inertial sensors, micro-mirrors for Lidar scanners, car data/program memories and computing platforms.

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The future is MEMS design considerations of microelectromechanical systems at Bosch

Cited by 14 publications

References 2 publications

A Behavioral Non-Linear Modeling Implementation for MEMS Capacitive Microphones

A Behavioral Non-Linear Modeling Implementation for MEMS Capacitive Microphones

Analysis and Performance Study of III–V Schottky Barrier Double-Gate MOSFETs Using a 2-D Analytical Model

Is Consumer Electronics Redesigning Our Cars?: Challenges of Integrated Technologies for Sensing, Computing, and Storage

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