The gate length effect of high-performance monolayer SiAs₂ FETs

Abstract

The monolayer SiAs 2 field-effect transistors (FETs) with gate length (L gate ) ranging from 1 to 50 nm were investigated by Silvaco-Atlas simulation in which the main parameters of monolayer SiAs 2 were obtained by first-principles calculations. Both the p-and n-FET show extremely high on/off current ratio (10 14 ) and low leakage current (10 −18 A µm −1 ), which are independent of gate length within the 15-50 nm range. And monolayer SiAs 2 FETs show practically acceptable values of subthreshold slope and drain-induced barrier lowering when L gate ⩾ 30 nm. On the other hand, the p-and n-FETs show highest transconductance (g m ) when L gate is between 25 and 35 nm. Our results suggest that the high performance 35 nm gate length monolayer SiAs 2 FETs hold great potential for applications in low-dimensional electronic devices.

2D solar cell with record high power conversion efficiency based on low-symmetry IV-V2 bilayer heterostructure

“…Recent studies have gained insights into a new member of the 2D material family: low-symmetry orthogonal IV-V 2 compounds(SiAs 2 , GeAs 2 and SiP 2 ) with widely tunable bandgaps, moderate carrier mobilities, highly in-plane anisotropic physical properties [14][15][16][17][18][19][20][21][22][23] and earth abundance of their constituent elements [24,25]. Layered orthogonalstructured GeAs 2 has been grown by chemical vapor transport method and monolayer GeAs 2 has been obtained by mechanical exfoliation [26].…”