2010 5th International Confernce on Ultrawideband and Ultrashort Impulse Signals 2010 Help me understand this report
The generation by Gunn diodes based on the GaN, InN, AlN TED's in biharmonic regime
Abstract: The frequency and power capabilities of the nitride semiconductor-А3В5-based Gunn diodes are evaluated using a temperature model of the intervalley electron transfer. Prospects, problems and characteristics of the nitride semiconductors in TED's for the harmonic and biharmonic modes are discussed.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
