The generation lifetime damage factor and its variance in silicon

Abstract

The generation damage factor and its variance for silicon are determined for proton energies of 12, 22, and 63 MeV, and for fission neutrons. Measurement of the variance is made for the first time using 61,504 pixels of a charge injection device. The variance is an intrinsic characteristic of damage due in part to differences in numbers and magnitudes of atomic recoils produced in each pixel. New calculations of the variance due to the recoil spectrum show that the magnitude of the relative variance is determined by coulombic recoils. Indeed, the experimental relative variance is almost two orders of magnitude less for fission neutron induced dark current increases than for the proton case. Also, the relative variance was found to decrease as the proton energy was increased. The calculation shows that this trend is caused by the inelastic contribution to the relative variance of the recoil spectrum.

Radiation-induced dark current in CMOS active pixel sensors

“…The experimental damage factor, defined in [12] had been extracted from Fig. 10 using a linear least-square regression.…”

Radiation tests on the COTS image sensor from CMOSIS

“…Chania, Greece 9 -12 October 2018 protons [15]. The experimental generation lifetime damage factor K [16,17] was calculated as the slopes of the lines in Figure 5 (right). The values of K for different colors for 50 MeV protons read: KGB = 3.36·10 -12 , KGR = 3.57·10 -12 , KB = 3.39·10 -12 , and KR = 3.6·10 -12 all in units of nA/particle.…”

CoRoT Satellite: Analysis of the In-Orbit CCD Dark Current Degradation

“…One can demonstrate that (see for instance [13]) (5) To make things clearer, Table II gives for the two first and the two last classes the , and values obtained by solving the associated sets of equations ( (3)). …”