The Geometric and Electronic Structures of Fe_<i>n</i>_-1Si(n=2-7) Clusters

Abstract

The geometric structures and electronic properties of Si doped Fen (n=2-7) clusters have been systematically studied at the BPW91 level in density-functional theory (DFT). Calculated results show that an Si impurity does not change the ground-state structure of small iron clusters and prefers to occupy surface site bonding with iron atoms as many as possible. The second-order energy difference and the vertical ionization potential show that n=4 and 6 are magic numbers within the size range studied, but the maximum value occurs at n=4 for the energy gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital(LUMO). It is found that the hybridization intensity between Si and Fe atoms is relevant to the stability of clusters.

Fe-Mg interplay and the effect of deposition mode in (Ga,Fe)N doped with Mg

“…It is worth mentioning that the E d value for Fe-Si pairs in bulk is similar to the binding energy -1.44 eV for an isolated Fe-Si cluster. 27 Finally, neither Mg nor Si are likely to form monoatomic pairs in the bulk (E d = 0.102 and 0.847 eV, respectively) or at the surface (E d = 0.130 and 0.067 eV, respectively).…”

“…Interestingly, the same configuration has been recently found to be the most stable structure for the isolated Fe 2 Si cluster. 27 Finally, the Fe 2 X 2 (X = Mg or Si) cluster forms two isosceles triangles with a common Fe-Fe base. The two triangles are almost coplanar and the cluster has Cs symmetry.…”