The Geometry Variation Effect on Carbon Atom Wire for Nano-Electronic Applications

Norouzi, Milad; Ahmadi, Ramin; Norian, Erfan; Ahmadi, Mohammad Taghi; Ismail, Razali

doi:10.1166/jno.2019.2606

Cited by 5 publications

(6 citation statements)

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“…The Hamiltonian matrix of the SSH model, [19], for N UC =3 unit cells, taking into account the slip angle α for a one-dimensional nanostructure is given by:…”

Section: The Hamiltonian Matrixmentioning

confidence: 99%

“…In 2017, Wong et al through ab-initio procedures, optimized superconducting quasi-1D carbon structures [17]. For a similar carbyne structure, by changing the angle between carbon atoms in 1D, the Su-Schrieffer-Heeger (SSH) model, along with the Mulliken formalism, can be used to describe the electronic behavior of the system [18,19]. In this study, we write the Hamiltonian within the Bogoliubov-de Gennes formalism [20], and calculate associated excitation energies, paying attention to induced superconductivity in a linear carbon chain with slip angle α.…”

Section: Introductionmentioning

confidence: 99%

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Induced superconductivity in linear carbon chains and engineering of zero-bias peaks with geometric angles: a new approach

Norouzi¹,

Seyed-Yazdi²

2021

Phys. Scr.

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We investigated the effect of slip angle, a geometric parameter named as α in superconducting quasi-one-dimensional carbon structures, by engendering resonant peak of linear carbon chains. We studied also the density of states and the effect of different slip angles on this structure. We found the interesting role of the slip angle, similar to the mixed superconducting state, creating a mass-like gap in the electron-hole excitation spectrum of the superconducting quasi-one-dimensional carbon structure. In the framework of the Dirac-Bogoliubov–de Gennes formalism, we investigated the transport properties in the superconducting linear carbon chain. The superconductor gap is taken to be a spin-singlet and spin-triplet superconducting state.

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“…The Hamiltonian matrix of the SSH model, [19], for N UC =3 unit cells, taking into account the slip angle α for a one-dimensional nanostructure is given by:…”

Section: The Hamiltonian Matrixmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Induced superconductivity in linear carbon chains and engineering of zero-bias peaks with geometric angles: a new approach

Norouzi¹,

Seyed-Yazdi²

2021

Phys. Scr.

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“…In the last decade, most efforts of nanotechnology researchers have been devoted to the study and characterization of electronic properties of graphene [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. Indeed, graphene is a two-dimensional honeycomb structure with high electron mobility and stable lattice which has different classifications [ 8 , 9 , 10 , 11 ], such as graphene nanoscroll, twisted graphene, graphene nanoribbon, and few-layer graphene [ 12 , 13 , 14 , 15 , 16 , 17 ].…”

Section: Introductionmentioning

confidence: 99%

Monolayer Twisted Graphene-Based Schottky Transistor

Ahmadi

Koloor

et al. 2021

Materials

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The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal–semiconductor–metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the ID-VGS is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.

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“…Graphene with hexagonal honeycomb structure of carbon atoms is a promising two dimensional (2D) structure for many technological applications such as nanoelectronics, optoelectronics, sensors, thermoelectrics and so on. [1][2][3][4][5][6][7][8][9][10][11][12] Consequently, in last decade graphene has been extensively considered in nanotechnology researches owing to outstanding properties. High electron and hole mobility (∼2 × 10 5 cm 2 Vs −1 ), remarkable electrical conductivity (∼1738 S m −1 ) and notable thermal conductivity (∼5 × 10 3 W mK −1 ) can be mentioned as significant features of graphene.…”

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confidence: 99%

Contact Effect On Twisted Graphene Based Schottky Transistor

Ahmadi

2022

ECS J. Solid State Sci. Technol.

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Owing to the exceptional electrical properties of different one-dimensional (1-D) classifications of graphene structure such as graphene nanoribbon (GNR) and twisted graphene (TWG) led to a revolution in nanoelectronic research and applications. Thus, these materials have been extensively explored in nanoelectronics science and materials. This paper is focused on GNR and TWG junction as metal-semiconductor-metal (MSM) in the form of a transistor. The wave vectors of TWG and GNR based on the geometrical effects are discussed. By considering 1-D potential barrier at the junction of TWG as a semiconducting region and GNR as a metallic region, the transmission probability is calculated. Then, the I-V characteristics of GNR-TWG Schottky transistor based on quantum tunneling effect is presented and discussed. The performance of GNR-TWG Schottky transistor under variation of gate-source voltage, channel length, number of twists, width of GNR and temperature are investigated. It is concluded that increment in number of twists and width of GNR lead to increasing the drain current and threshold voltage. Finally, a comparison study with graphene nanoscroll (GNS) Schottky transistor, trilayer graphene nanoribbon (TGNR) Schottky transistor, and reported experimental data was performed and the results show that GNR-TWG Schottky transistor has larger drain current than these works.

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The Geometry Variation Effect on Carbon Atom Wire for Nano-Electronic Applications

Cited by 5 publications

References 0 publications

Induced superconductivity in linear carbon chains and engineering of zero-bias peaks with geometric angles: a new approach

Induced superconductivity in linear carbon chains and engineering of zero-bias peaks with geometric angles: a new approach

Monolayer Twisted Graphene-Based Schottky Transistor

Contact Effect On Twisted Graphene Based Schottky Transistor

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