The getters in silicon

Харченко, В. А.

doi:10.17073/1609-3577-2018-1-5-17

Cited by 4 publications

(1 citation statement)

References 12 publications

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“…The main way to increase lifetime in SC structures is gettering. Impurity atoms gettering allows not only to increase NCC lifetime, but also provides stability of electrical and recombination parameters of material, that is repeatedly heat treated during SC manufacturing [5].…”

Section: Introductionmentioning

confidence: 99%

Effect of nickel on the lifetime of charge carriers in silicon solar cells

et al. 2022

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It has been shown experimentally that nickel clusters on the surface of a silicon sample contain a large amount of oxygen and recombination impurities --- Cu, Fe, Cr, and so shows good gettering properties of clusters. The optimum temperature of nickel diffusion into silicon is determined as 800-850oC. Doping with impurity nickel atoms with the formation of clusters makes it possible to increase the lifetime of nonequilibrium charge carriers in the base of a solar cell by up to 2 times, while the formation of a nickel-enriched region in the face layer is more efficient. It is shown that the effect of additional doping with nickel weakly depends on the sequence of the processes of nickel diffusion and the creation of a working p-n-junction. Keywords: silicon solar cells, nickel diffusion, nonequilibrium charge carriers, gettering, p-n junction.

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Section: Introductionmentioning

confidence: 99%

Effect of nickel on the lifetime of charge carriers in silicon solar cells

et al. 2022

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Improving parameters of planar pulse diode using gettering

М.

Викулин

et al. 2021

ТКЭА

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Pulse diodes are widely used as part of high-frequency pulse circuits. However, it should be noted that the cost of pulsed diodes remains relatively high, due to the low yield of suitable devices when they are sorted according to the criteria of reverse current and rated capacitance. This is largely caused by the significant dependence of their electrical parameters on the density of structural defects and impurities in the active regions of the diodes. The study is devoted to identifying the causes and mechanisms of the low yield of diodes when they are sorted according to the criteria of reverse current and rated capacitance, as well as determining the possibility of using gettering operations to increase the yield of suitable devices. It is found that the low yield of the diodes is caused by the structural defects that are formed in the active areas of the diodes during high-temperature technological operations. The paper describes the mechanisms in which the structural defects affect the electrical parameters of diodes. The proposed technology for manufacturing diode structures using gettering of structural impurity defects by means of high-temperature annealing in an inert medium before the thermal oxidation operation is considered. It is shown that high-temperature annealing of silicon structures before thermal oxidation eliminates packing defects formed during epitaxy, cleans the active areas of the diodes from nuclei of defects and unwanted impurities, and prevents the formation of structural defects in them during the subsequent high-temperature thermal operations. The use of the proposed technology allows increasing the yield of suitable diode structures by 8.9% when sorted according to rated capacitance and by 9.4% when sorted according to reverse current, the level of reverse currents reducing by 2—9 times.

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Improvement of inverse characteristics of silicon varicap by using low-temperature gettering

Litvinenko,

Shutov

2023

TKEA

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Varicaps are widely used in radio electronics as a variable capacitance, the value of which is controlled by voltage. However, it should be noted that the cost of varicaps remains relatively high due to a low yield of suitable devices. This is caused by high levels of reverse currents and low breakdown voltages of varicaps, which is determined by the significant dependence of the reverse characteristics of varicaps on the density of structural defects and heavy metal impurities in their active regions. This study aimed to discover the causes and mechanisms of degradation of the reverse characteristics of varicaps with an ohmic contact based on nickel during annealing of a nickel film during the formation of an ohmic contact. Another goal was to determine the possibility of using gettering operations to prevent degradation of the reverse characteristics of varicaps and increase the yield of suitable devices. The conducted experimental studies have shown that the reason for the degradation of the reverse characteristics of varicaps during the formation of a nickel-based ohmic contact is that, during the annealing of the nickel film, the excess nickel atoms not involved in the formation of NiSi silicide penetrate into the region of the space charge of the p-n junction. The authors consider in detail the proposed technology for manufacturing nickel-based varicap structures with an ohmic contact using gettering of excess nickel atoms by carrying out additional low-temperature annealing of varicap structures using a ready-made “intrinsic geter” — the Si-NiSi interface. It is shown that the developed technology for fabricating varicap structures using gettering makes it possible to clean the active regions of varicaps from nickel atoms, which ensures a significant decrease in the level of varicap reverse currents and an increase in the yield of suitable devices.

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The getters in silicon

Cited by 4 publications

References 12 publications

Effect of nickel on the lifetime of charge carriers in silicon solar cells

Effect of nickel on the lifetime of charge carriers in silicon solar cells

Improving parameters of planar pulse diode using gettering

Improvement of inverse characteristics of silicon varicap by using low-temperature gettering

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