The growth and characterization of epitaxial Ba₂NdTaO₆dielectric ceramic thin films on (100) SrTiO₃

Abstract

Ba2NdTaO6 (BNTO) dielectric ceramic thin films were grown on (100) SrTiO3 by pulsed laser deposition technique. The optimum growth conditions for the epitaxial growth of BNTO on single crystal SrTiO3 have been established. The BNTO films were characterized by θ–2θ, ω-scan and ϕ-scan measurements using a four-axis x-ray diffractometer and the surface morphology studied by atomic force microscopy. The films grown under the optimized conditions were epitaxial with (00l) orientation and were in-plane aligned. The BNTO films grown under the optimized deposition condition were smooth with a root mean square roughness of 2 nm for a 2 μm×2μm area. The dielectric properties of the BNTO films measured using impedance analyser show that the dielectric constant and loss factor values agree with the values reported for the bulk BNTO in the literature.

Properties of YBa2Cu3O7−δ Superconducting Films on Sr2YSbO6 Buffer Layers

“…However, has relatively high mismatch with YBa 2 Cu 3 O 7−δ and reacts chemically with superconductor, thus, the interfacial BaAl 2 O 4 layer is formed, which affects the epitaxial growth of the film and result in poor superconducting films (Hollmannt et al, 1994). (Findikoglu et al, 1992;Ying & Hilbert, 1994); Ca 2 GaNbO 6 ;S r 2 GaTaO 6 (Brandle, 1996); Ba 2 LaNbO 6 (Pai et al, 1997); DyBa 2 SnO 5.5 (Koshy et al, 1995); DyBa 2 ZrO 5.5 ; HoBa 2 SbO 6 and Ba 2 NdTaO 6 (Kurian et al, 2002;Kurian & Morishita, 2003).…”