The growth and properties of epitaxial layers of zinc sulphide on germanium

Deasley, P. J.; Owen, S. J. T.; Webb, Paul W.

doi:10.1007/bf02403277

J Mater Sci

1970

DOI: 10.1007/bf02403277

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The growth and properties of epitaxial layers of zinc sulphide on germanium

P. J. Deasley

S. J. T. Owen

Paul W. Webb

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1974

1979

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Cited by 9 publications

References 15 publications

(16 reference statements)

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Zur relativen Stabilität der Zinkblende‐ und Wurtzit‐Struktur in Epitaxieschichten

Kühn¹,

Hübner²,

Däweritz³

1974

Cryst Res and Technol

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Zur relativen StabilitPt der Zinkblende-und Wurtzit-Struktur in Epitaxieschichten Der EinfluR der Polaritst von <222>-orientierten AmBV-Substraten auf die Kristallstruktur epitaktisch abgeschiedener quantitativ von Hiibner und Kiihn diskutiert. Grundlage dafiir bildete der von Lawaetz aus der semiempirischen dielektrischen Struktur-und Substanztheorie (PHILLIPS, VAN VECHTEN) entlehnte -Parameter, der die Zinkblende-und Wurtzit-StruMur in Volumenkristallen tetraedrisch koordinierter Halbleiter gegeneinander abgrenzt. Lawaetz fand, daR Vorzeichen und GroiRe der Abweichung A (C/a) des Verhsltnisses der Gitterkonstanten vom Idealwert 1,633 ein empfindliches MaB fiir die StabilitPt der einen gegeniiber der anderen Phase ist. Er identifizierte Kristalle mit A (c/a) = C/a -1,633 Wurtzit-und mit A (C/a) > 0 als stabil in der Zinkblende-Struktur. Die GroRe d (c/a) brachte Lawaetz rnit dem weitgehend strukturunabhangigen dimensionslosen Parameter AIIBVI-Halbleiter wurde erstmalig

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Zur relativen Stabilität der Zinkblende‐ und Wurtzit‐Struktur in Epitaxieschichten

Kühn¹,

Hübner²,

Däweritz³

1974

Cryst Res and Technol

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show abstract

Growth of films of CdS evaporated in vacuum onto silicon

Barter

Boswarva

Holt

et al. 1979

Journal of Crystal Growth

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The growth and structure of epitaxial films and heterojunctions of II–VI compounds

Holt

1974

Thin Solid Films

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The growth and properties of epitaxial layers of zinc sulphide on germanium

Cited by 9 publications

References 15 publications

Zur relativen Stabilität der Zinkblende‐ und Wurtzit‐Struktur in Epitaxieschichten

Zur relativen Stabilität der Zinkblende‐ und Wurtzit‐Struktur in Epitaxieschichten

Growth of films of CdS evaporated in vacuum onto silicon

The growth and structure of epitaxial films and heterojunctions of II–VI compounds

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