The growth mechanism of GaN grown by hydride vapor phase epitaxy in N2 and H2 carrier gas

Metal-organic chemical vapor deposition of ZnO

“…Reactor pressures, disk rotation speeds, and temperatures typical of III-V semiconductor growth conditions were used [21][22][23], and temperature was varied to study its effects on ZnO etching. Reactor pressure was held at 500 Torr and disk rotation speed was held at 1500 rpm while flow rates of 23 and 20 l/min were used for H 2 and N 2 , respectively.…”

Method for HVPE growth of thick crack-free GaN layers

“…As a start, the parameters during HVPE growth-like reactor design, carrier gasses and precursors are very important in obtaining good quality layers [7][8][9][10][11][12]. However, after these aspects have been optimized still many things can be varied.…”

Efficiency enhancement of InGaN/GaN light‐emitting diodes utilizing island‐like GaN substrate

“…The distance between nearest islands is 50 µm. The conditions for HVPE growth have been described in previous paper [9].…”