The growth of GaSb under microgravity conditions

Lendvay, E.; Hársy, M.; Görög, T.; Gyuro, I.; Pozsgai, I.; Koltai, F.; Gyulai, J.; Lohner, T.; Mezey, G.; Kótai, E.; Pászti, F.; Hrjapov, V.T.; Kultchisky, N.A.; Regel, L. L.

doi:10.1016/0022-0248(85)90360-4

Cited by 22 publications

(4 citation statements)

References 12 publications

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“…In space at zero gravity, the molten semiconductor does not stick to the quartz wall leading to good surface quality. 76 The heat transfer in space differs from that in the terrestial conditions. The vacuum gap between the ingot and the ampoule wall allows only a limited amount of heat to be dissipated from the surface.…”

Section: Growth Under Microgravitymentioning

confidence: 99%

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The physics and technology of gallium antimonide: An emerging optoelectronic material

Dutta

Bhat

Kumar

1997

Journal of Applied Physics

672

396

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Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 1.55 m. The III-V ternaries and quaternaries ͑AlGaIn͒͑AsSb͒ lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices. Consequently, there has been tremendous upthrust in research activities of GaSb-based systems. As a matter of fact, this compound has proved to be an interesting material for both basic and applied research. At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication. This article presents an up to date comprehensive account of research carried out hitherto. It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility. An overview of the lattice, electronic, transport, optical and device related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed. These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc. Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed. It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication.

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Section: Growth Under Microgravitymentioning

confidence: 99%

“…The heat flows in the axial direction which results in relatively stress free crystals. Lendvay et al 76 were able to grow high quality bicrystals using the Bridgman technique under microgravity conditions ͑10 Ϫ5 g). The translational rate of the ampoule was 0.188 mm/min.…”

Section: Growth Under Microgravitymentioning

confidence: 99%

The physics and technology of gallium antimonide: An emerging optoelectronic material

Dutta

Bhat

Kumar

1997

Journal of Applied Physics

672

396

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“…Also, dislocation densities were less, often orders of magnitude when the solidification had been detached [36–38]. In semiconductors, this higher perfection led to substantial increase in charge carrier mobility [39–43]. However the samples presented here are polycrystals with a rather bad structure, then the good transport properties remain surprising.…”

Section: Measurement Results and Analysismentioning

confidence: 99%

Dewetting and transport property enhancement: antimonide crystals for high performance electronic devices

Ebnalwaled¹,

Duffar²,

Sylla³

2013

Cryst. Res. Technol.

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The dewetting technique has been applied to the growth of InSb and GaSb polycrystals. After optimization of the set up and growth parameters, four samples, 88 mm in length and 11 mm in diameter, have been obtained. Their electrical properties were investigated in relation to the type of solidification (attached, dewetted and so on). In spite of the polycrystalline structure of these samples, room temperature Hall mobilities obtained for dewetted antimonide samples have shown the highest values obtained till now. These results indicate that dewetting can be used to produce InSb and GaSb with high mobility for device applications.

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“…Witt等人 [12] 在该任务中通过掺Te的InSb晶体生长, 发现空间生长的晶体中不存在生长条纹, 仅在地面中生长的籽晶中有生长条纹, 提出由于微重力环境下消除了浮力对流, 可以抑制生长条纹的产生. Yee等人 [13] 在该任务中研究了重力对 1985年, Lendvay等人 [14] 在礼炮六号上以Bridg-man法在微重力作用下生长了高质量的GaSb晶体.…”

Section: 引言unclassified

Study on crystal growth of In<italic>x</italic>Ga1−<italic>x</italic>Sb under microgravity

Fang

Xia

Wang

et al. 2020

Sci. Sin.-Phys. Mech. Astron.

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The growth of GaSb under microgravity conditions

Cited by 22 publications

References 12 publications

The physics and technology of gallium antimonide: An emerging optoelectronic material

The physics and technology of gallium antimonide: An emerging optoelectronic material

Dewetting and transport property enhancement: antimonide crystals for high performance electronic devices

Study on crystal growth of In<sub><italic>x</italic></sub>Ga<sub>1−</sub><sub><italic>x</italic></sub>Sb under microgravity

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The growth of GaSb under microgravity conditions

Cited by 22 publications

References 12 publications

The physics and technology of gallium antimonide: An emerging optoelectronic material

The physics and technology of gallium antimonide: An emerging optoelectronic material

Dewetting and transport property enhancement: antimonide crystals for high performance electronic devices

Study on crystal growth of In&lt;sub&gt;&lt;italic&gt;x&lt;/italic&gt;&lt;/sub&gt;Ga&lt;sub&gt;1&minus;&lt;/sub&gt;&lt;sub&gt;&lt;italic&gt;x&lt;/italic&gt;&lt;/sub&gt;Sb under microgravity

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Study on crystal growth of In<sub><italic>x</italic></sub>Ga<sub>1−</sub><sub><italic>x</italic></sub>Sb under microgravity