The growth of Ge and direct bandgap Ge1−xSnx on GaAs (001) by molecular beam epitaxy

Gunder, Calbi; Maia de Oliveira, Fernando; Wangila, Emmanuel; Stanchu, Hryhorii; Zamani-Alavijeh, Mohammad; Ojo, Solomon; Acharya, Sudip; Said, Abdulla; Li, Chen; Mazur, Yuriy I.; Yu, Shui-Qing; Salamo, Gregory J.

doi:10.1039/d3ra06774b

Cited by 2 publications

(2 citation statements)

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“…This decrease in quality is likely due to the relaxation process and defect propagation in the film. These results directly support the claim that gradient-based structures can help mitigate or suppress defect propagation [ 8 ].…”

Section: Resultssupporting

confidence: 81%

“…For these growths, we maintained an arsenic-to-gallium ratio of 15:1. For all GeSn samples grown, a constant Ge BEP of

was used, along with a manipulator temperature gradient ranging from 200 to 50 °C at a ramp rate of 10 °C/min, using the same procedure reported previously by Gunder et al [ 8 ]. In addition to this, an extra 7 min of growth was added to the conclusion of each logarithmic-based growth at the final Sn cell temperature (

).…”

Section: Methodsmentioning

confidence: 99%

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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy

Gunder,

Zamani-Alavijeh,

Wangila

et al. 2024

Nanomaterials

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The growth of high-composition GeSn films in the future will likely be guided by algorithms. In this study, we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16% on GaAs (001) substrates via molecular beam epitaxy. Herein, we use composition targeting and logarithmic Sn cell temperature control to achieve linearly graded pseudomorph Ge1−xSnx compositions up to 10% before partial relaxation of the structure and a continued gradient up to 16% GeSn. In this report, we use X-ray diffraction, simulation, secondary ion mass spectrometry, and atomic force microscopy to analyze and demonstrate some of the possible growths that can be produced with the enclosed algorithm. This methodology of growth is a major step forward in the field of GeSn development and the first ever demonstration of algorithmically driven, linearly graded GeSn films.

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Section: Resultssupporting

confidence: 81%

“…For these growths, we maintained an arsenic-to-gallium ratio of 15:1. For all GeSn samples grown, a constant Ge BEP of

).…”

Section: Methodsmentioning

confidence: 99%

Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy

Gunder,

Zamani-Alavijeh,

Wangila

et al. 2024

Nanomaterials

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The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire

Wangila,

Gunder,

Lytvyn

et al. 2024

Crystals

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Ge1−xSnx growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge1−xSnx on Ge/GaAs/AlAs/sapphire were investigated by in situ and ex situ characterization techniques to ascertain the surface morphology, crystal structure, and quality. The growth mode of Ge on GaAs was predominantly two-dimensional (2D), which signifies a layer-by-layer deposition, contributing to enhanced crystal quality in the Ge/GaAs system. The growth of Ge1−xSnx with 10% Sn on a graded profile for 30 min shows uniform composition and a strong peak on the reciprocal space map (RSM). On the other hand, the partially relaxed growth of the alloy on RSM was established.

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The growth of Ge and direct bandgap Ge_1−xSn_x on GaAs (001) by molecular beam epitaxy

Abstract: Germanium tin (GeSn) is a tuneable narrow bandgap material, which has shown remarkable promise for the industry of near- and mid-infrared technologies for high efficiency photodetectors and laser devices.

Cited by 2 publications

References 28 publications

Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy

Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy

The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire

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