The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy

Emelyanov, E. A.; Vasev, A. V.; Semyagin, B. R.; Yesin, M. Yu.; Loshkarev, I. D.; Василенко, А. Т.; Putyato, М. А.; Petrushkov, M. O.; Preobrazhenskii, V. V.

doi:10.1134/s1063782619040092

Cited by 3 publications

(1 citation statement)

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“…Most commonly, the angles of the layer orientation rotation in relation to the substrate along the growth direction during the HES growth are experimentally measured by the X-ray diffraction method. The rotation of the orientation plane along the growth direction is observed when growing the heterosystems based on the various semiconductors [15][16][17][18][19][20][21][22]. For the MBE MCT HES'es on the (112)CdZnTe substrate, there was evidently the rotation of the orientation plane to 100 ang.…”

Section: Introductionmentioning

confidence: 99%

Study of the Crystalline State of MBE (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructure Layers by the Second Harmonic Generation Method

et al. 2022

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The crystal perfection of HgCdTe layers of heterostructures grown on (013)GaAs substrates with ZnTe and CdTe buffer layers and orientation rotation in the plane(angle φ) and perpendicular to the growth direction (angle theta) were studied by the method of second harmonic generation. A change in the angle φ for CdTe layers was observed depending on the GaAs substrate orientation and its non-monotonic change throughout thickness in the MCT layer of constant composition and graded widegap layers at its boundaries. An increase in the angle theta was observed when growing the upper graded widegap MCT layer. The absolute value of the angle theta can be used for a qualitative assessment of the crystalline perfection of the HgCdTe layers. Keywords: crystals of the sphalerite class, second harmonic, azimuthal angular dependencies, crystal perfection, CdxHg1-xTe heterostructures.

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Section: Introductionmentioning

confidence: 99%

Study of the Crystalline State of MBE (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructure Layers by the Second Harmonic Generation Method

et al. 2022

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Different substrate structures affect the substitution efficiency of Al atoms in AlxGa1−xN epitaxial films

Wang,

Ao,

Yan

et al. 2024

AIP Advances

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Through XRD analysis and xrayutilities fitting, this paper investigates the structural parameters of AlxGa1−xN(AlGaN) epitaxial layers grown on both free-standing GaN (FS-GaN) substrates and GaN templates (4.5 um GaN on Sapphire), including thickness and Al composition. These parameters determine the conductivity performance of GaN high electron mobility transistor devices. Under the same growth conditions, the Al composition in the AlGaN epitaxial layer grown on FS-GaN substrates is lower, but the thickness (growth rate) is higher, indicating a relatively weaker efficiency of Al substitution for Ga. This trend remains within a large range of trimethylgallium input ratios of 20%–40%. By analyzing and demonstrating the various differences between the two substrates, it can be concluded that the misorientation angle and threading dislocation density of the GaN layer have a high correlation with the efficiency of Al substitution, while the stress of the GaN layer and the temperature of the substrate surface show no significant correlation.

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MBE of InAsSb Solid Solutions on Misoriented GaAs(100) Substrates: Experiment and Kinetic Analysis

Emelyanov

Petrushkov

Putyato

et al. 2019

2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)

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The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy

Cited by 3 publications

References 28 publications

Study of the Crystalline State of MBE (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructure Layers by the Second Harmonic Generation Method

Study of the Crystalline State of MBE (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructure Layers by the Second Harmonic Generation Method

Different substrate structures affect the substitution efficiency of Al atoms in AlxGa1−xN epitaxial films

MBE of InAsSb Solid Solutions on Misoriented GaAs(100) Substrates: Experiment and Kinetic Analysis

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