The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

Ji, Shiyang; Kojima, Kazutoshi; Ishida, Yuuki; Saito, Shingo; Kato, Tomohisa; Tsuchida, Hidekazu; Yoshida, Sadafumi; Okumura, Hajime

doi:10.1016/j.jcrysgro.2013.05.039

Cited by 35 publications

(56 citation statements)

References 29 publications

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“…The resistivity agrees with a doped SiC x material. [33] Considering there should be contact resistances between the Pt electrodes and the nanowire, the actual nanowire resistivity could be lower. Further research work is needed to improve the purity of the material, and more devices need to be made and tested to show the resistivity relationship with the purity of the nanowires.…”

Section: Resultsmentioning

confidence: 99%

A Study of Electron Beam Induced Deposition and Nano Device Fabrication Using Liquid Cell TEM Technology

et al. 2014

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SiC x nano dots and nano wires with sizes from 60 nm to approximately 2 μm were fabricated using liquid cell transmission electron microscope (TEM) technology. A SiCl 4 in CH 2 Cl 2 solution was sealed between two pieces of Si 3 N 4 window grids in an in situ TEM liquid cell. Focused 200 keV electron beams were used to bombard the sealed precursors, which caused decomposition of the precursor materials, and deposition of the nano materials on the Si 3 N 4 window substrates. The size of nano dots increased with beam exposure time, following an approximately exponential relationship with the beam doses. Secondary electrons are attributed as the primary sources for the Si and C reduction. A nano device was formed from a deposited nano wire, with its electrical property characterized.

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Section: Resultsmentioning

confidence: 99%

A Study of Electron Beam Induced Deposition and Nano Device Fabrication Using Liquid Cell TEM Technology

et al. 2014

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“…Therefore, these findings reveal that the codoping of N to Al-doped 4H-SiC grown by CVD only causes a small drop in the growth rate and improves the surface morphology since the variations of epilayer thicknesses are small and all about 7 µm. 28,29) The concentrations of Al and N impurities in each sample measured by SIMS are listed in Table I. The table shows that the concentration of Al impurity in all the samples grown at various N 2 flow rates are approximately mid 10 19 cm ¹3 , suggesting that the intentional doping of N 2 has only small effects on Al incorporation.…”

Section: Resultsmentioning

confidence: 99%

“…The N Al -dependent c-lattice change (mismatch, ¦c/c sub ) is summarized in Fig. 5, where the open squares are our previous results on heavily Al-doped 4H-SiC epilayers on an 8°-off substrate, 28) the solid square and triangles are calculated from the RSM profiles in Fig. 3.…”

Section: Resultsmentioning

confidence: 99%

“…The details of the measurement method are reported elsewhere. 28) By assuming spherical bending, the extent of the wafer bow was expressed as the curvature radius of crystal bending deduced from the peak shift between two rocking curves of 4H-SiC 0004 reflections (sensitive to bending) recorded at two positions located «20 mm from the center of 3-in. epiwafer as described in references.…”

Section: Methodsmentioning

confidence: 99%

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Experiment on alleviating the bending of CVD-grown heavily Al-doped 4H-SiC epiwafer by codoping of N

Kojima

Ishida

et al. 2015

Jpn. J. Appl. Phys.

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In order to alleviate the convex wafer bow that commonly occurs on a heavily Al-doped 4H-SiC epilayer grown on an n + substrate, nitrogen gas was intentionally introduced, together with an Al dopant gas during CVD growth, that is Al-N codoping. It was found that, by introducing N 2 at various flow rates, the concentration of incorporated N impurity increases along with the supplied flow rate, while the Al impurity remains at a similar concentration. With the codoping of N and Al in 4H-SiC, a marked reduction of wafer bow has been achieved. The crystal structural measurement suggests that the introduction of N impurity alleviates the large wafer bow owing to the reduced lattice constant differences between the p + epilayer and the n + substrate.

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“…Details of the dependence of aluminum doping on the growth conditions (temperature, pressure) are found in References [136,138]. A very low resistivity of 0.0165 Ωcm has been achieved by heavy Al doping over 5 × 10 20 cm −3 [139]. Other p-type dopants include B and gallium (Ga), which can be introduced using B2H6 gas [140] or trimethylgallium (TMG) [141], respectively.…”

Section: Doping Controlmentioning

confidence: 99%

Bulk and epitaxial growth of silicon carbide

Kimoto

2016

Progress in Crystal Growth and Characterization of Materials

143

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The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

Cited by 35 publications

References 29 publications

A Study of Electron Beam Induced Deposition and Nano Device Fabrication Using Liquid Cell TEM Technology

A Study of Electron Beam Induced Deposition and Nano Device Fabrication Using Liquid Cell TEM Technology

Experiment on alleviating the bending of CVD-grown heavily Al-doped 4H-SiC epiwafer by codoping of N

Bulk and epitaxial growth of silicon carbide

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