The growth of low-threading-dislocation-density GaAs buffer layers on Si substrates

Dang, Manyu; Deng, Huiwen; Huo, Suguo; Juluri, R. R.; Sánchez, Ana; Seeds, A.J.; Liu, Huiyun; Tang, Mingchu

doi:10.1088/1361-6463/ace36d

Cited by 5 publications

(1 citation statement)

References 33 publications

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“…Electron channeling contrast images of (a) 3000 nm GaAs buffer, (b) 1500 nm GaAs buffer, and (c) 700 nm GaAs buffer on Si. (d) Recent TDD results of different research groups. ,− …”

Section: Resultsmentioning

confidence: 99%

Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III–V Quantum Dot Lasers on a Si Substrate

Laryn,

Chu,

Kim

et al. 2024

ACS Appl. Mater. Interfaces

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Monolithic integration of III–V quantum dot (QD) lasers onto a Si substrate is a scalable and reliable approach for obtaining highly efficient light sources for Si photonics. Recently, a combination of optimized GaAs buffers and QD gain materials resulted in monolithically integrated butt-coupled lasers on Si. However, the use of thick GaAs buffers up to 3 μm not only hinders accurate vertical alignment to the Si optical waveguide but also imposes considerable growth costs and time constraints. Here, for the first time, we demonstrate InAs QD lasers epitaxially grown on a 700 nm thick GaAs/Si template, which is approximately four times thinner than the conventional III–V buffers on Si. The optimized 700 nm GaAs buffer yields a remarkably smooth surface and low threading dislocation density of 4 × 108 cm–2, which is sufficient for QD laser growth. The InAs QD lasers fabricated on these ultrathin templates still lase at room temperature with a threshold current density of 661 A/cm2 and a characteristic temperature of 50 K. We believe that these results are important for the monolithically integrated III–V QD lasers for Si photonics applications.

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“…Electron channeling contrast images of (a) 3000 nm GaAs buffer, (b) 1500 nm GaAs buffer, and (c) 700 nm GaAs buffer on Si. (d) Recent TDD results of different research groups. ,− …”

Section: Resultsmentioning

confidence: 99%

Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III–V Quantum Dot Lasers on a Si Substrate

Laryn,

Chu,

Kim

et al. 2024

ACS Appl. Mater. Interfaces

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Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy

Gilbert,

Graser,

Ramonda

et al. 2024

Advanced Physics Research

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The monolithic integration of III‐V semiconductors on Si emerges as a promising approach for realizing photonic integrated circuits. However, the performance and reliability of epitaxially grown devices on Si are hampered by the threading dislocation density (TDD) generated during the growth. In this study, the efficiency of a structure, combining III‐Sb‐based insertion layers and thermal annealing is evaluated, on the reduction of the emerging TDD in GaSb buffer layers grown on Si(001) substrates by molecular beam epitaxy. the impact of the thickness, composition, and number of the insertion layers is extensively explored. Then a detailed study of the annealing cycles with different conditions is conducted. A record TDD in the low 107 cm−2 for a 2.25 µm GaSb buffer grown on Si(001) is ultimately demonstrated.

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Impacts of Dislocations and Residual Thermal Tension on Monolithically Integrated InGaP/GaAs/Si Triple‐Junction Solar Cells

Kim,

Shin,

et al. 2024

Solar RRL

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Direct epitaxy of III−V materials on Si is a promising approach for highly stable, scalable, and efficient Si‐based multijunction solar cells. However, challenges lie in overcoming epitaxial dislocations and residual thermal strain generated by lattice constant and thermal‐expansion‐coefficient mismatches, respectively. Herein, a 15.2% efficient InGaP/GaAs/Si triple‐junction solar cell with an open‐circuit voltage of 2.36 V by using In0.10Al0.16Ga0.74As digital‐alloy dislocation filter layers is first demonstrated. The filter layers are utilized in the n‐GaAs buffer on Si to reduce threading dislocation density to 4 × 107 cm−2 while maintaining optical transparency to Si bottom cell. Then, the impacts of threading dislocations and residual tension on InGaP/GaAs/Si cells are systematically investigated by comparing them to the co‐grown InGaP/GaAs tandem cells on a native GaAs substrate. Based on the comparative analysis, a strategy to suppress material deformation and defect formation toward 30% efficient InGaP/GaAs/Si triple‐junction solar cells is proposed.

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The growth of low-threading-dislocation-density GaAs buffer layers on Si substrates

Cited by 5 publications

References 33 publications

Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III–V Quantum Dot Lasers on a Si Substrate

Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III–V Quantum Dot Lasers on a Si Substrate

Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy

Impacts of Dislocations and Residual Thermal Tension on Monolithically Integrated InGaP/GaAs/Si Triple‐Junction Solar Cells

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