The growth of Pd thin films on a 6H-SiC(0001) substrate

Tsiaoussis, I.; Frangis, N.; Manolikas, C.; Tan, T.A. Nguyen

doi:10.1016/j.jcrysgro.2006.12.036

Cited by 10 publications

(6 citation statements)

References 16 publications

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“…The direction of the wafer flat is shown in the SEM micrograph. While it is surprising that epitaxy occurs in the presence of native SiO 2 and the detailed mechanism is unclear, epitaxy in presence of amorphous layer on Si has been reported in earlier studies [25,26]. We may also add that the orientation of crystallites with respect to silicon substrate was independent of orientation of substrate during growth.…”

Section: Resultsmentioning

confidence: 65%

Growth of highly oriented crystalline polyaniline films by self-organization

Sutar

Nimmakayala

Aswal

et al. 2007

Journal of Colloid and Interface Science

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Section: Resultsmentioning

confidence: 65%

Growth of highly oriented crystalline polyaniline films by self-organization

Sutar

Nimmakayala

Aswal

et al. 2007

Journal of Colloid and Interface Science

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“…Multiple experimental studies have been completed where palladium has been deposited on the surface of SiC and palladium silicides have formed at temperatures as low as 773 K [22][23][24][25]. The palladium silicides generally form islands on the surface of SiC and the carbon forms graphite around the islands [26].…”

Section: Palladium Attack On Sic In Triso Fuelmentioning

confidence: 99%

Modeling Deep Burn TRISO particle nuclear fuel

Besmann

Stoller

Samolyuk

et al. 2012

Journal of Nuclear Materials

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“…Two papers investigated the {0001} surface in 6H-SiC (Refs. 7,8) which is similar chemically to the {111} in 3C-SiC, yet both of these papers were tested on Si-rich 6H-SiC which is not directly comparable to our surface. With a Si-rich surface a quick reaction is observed between the Pd and Si-rich layers.…”

Section: Palladium Reactionmentioning

confidence: 99%

“…[7][8][9]. At temperatures as low as 500 • C, Pd reacts with SiC to form islands of palladium silicide (predominantly Pd 2 Si) surrounded by amorphous graphite.…”

Section: Introductionmentioning

confidence: 99%

Ab initiostudy of the adsorption, migration, clustering, and reaction of palladium on the surface of silicon carbide

Schuck

Stoller

2011

Phys. Rev. B

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This work presents first principle calculations to understand the adsorption, clustering, migration, and reaction of Pd on three different surfaces of . The surfaces were chosen based upon experimental and theoretical work. Pd preferably binds to Si-terminated surfaces and has higher migration energies on these surfaces. Pd has low migration energies on non-Si-terminated surfaces facilitating the creation of Pd clusters. About 0.5 eV is gained per Pd atom added to a cluster. Reaction mechanisms are reported for Pd reacting on {100} surfaces. On the {100} C-terminated surfaces, a single Pd atom can substitute for a C with an energy barrier of 0.48 eV and two Pd atoms can substitute for two C atoms with an energy barrier of 0.04 eV. In both cases, the Pd atoms form Pd-C-C bridges between Si lattice sites. For the {100} Si-terminated surface, a single Pd atom can substitute for a Si atom with an energy barrier is 1.53 eV. No comparable low energy pathways were found on the {111} surface.

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The growth of Pd thin films on a 6H-SiC(0001) substrate

Cited by 10 publications

References 16 publications

Growth of highly oriented crystalline polyaniline films by self-organization

Growth of highly oriented crystalline polyaniline films by self-organization

Modeling Deep Burn TRISO particle nuclear fuel

Ab initiostudy of the adsorption, migration, clustering, and reaction of palladium on the surface of silicon carbide

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