The guard-ring termination for the high-voltage SiC Schottky barrier diodes

Ueno, Katsunori; Urushidani, T.; Hashimoto, Kazuhide; Seki, Y.

doi:10.1109/55.388724

Cited by 44 publications

(20 citation statements)

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“…Over the past six years or so, several other groups have investigated highvoltage ( 100 V) Schottky diodes on SiC [6]- [8], [16]- [18], and [24]- [29]. The various device approaches and resulting characteristics are summarized in Table V of the review by Saxena and Steckl [23].…”

Section: Discussionmentioning

confidence: 99%

“…For an applied forward bias, , the forward characteristics of a Schottky diode obeying the thermionic emission model can be written as [21] ( 7) where was defined in (3) and is the specific onresistance of the diode. Upon differentiating with respect to in (7) and rearranging the terms, the following relationship can be obtained: (8) Plotting versus , the slope of the straight line gives the specific series resistance, , and the -axis intercept gives the ideality factor . The Schottky barrier height is evaluated by defining a function given by [21] …”

Section: High-temperature Performancementioning

confidence: 99%

“…Several techniques have been shown to reduce the field crowding at the edges, thus resulting in higher breakdown voltages. These include 1) the use of floating metal field rings (FMR) and resistive Schottky barrier field plates (RESP) as reported by Bhatnagar et al [3]; 2) the use of implantation of neutral species at the periphery of the diode to form an amorphous area around the periphery of the device [4]- [7]; and 3) the p-n junction guard-ring termination formed by a local oxide process (LOCOS) [8]. In most of these structures, the SiC surface is unpassivated and there is no dielectric isolation between devices on the chip.…”

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confidence: 99%

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High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

Saxena

Steckl

1999

IEEE Trans. Electron Devices

193

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Abstract-We have fabricated 1 kV 4H and 6H SiC Schottky diodes utilizing a metal-oxide overlap structure for electric field termination. This simple structure when used with a high barrier height metal such as Ni has consistently given us good yield of Schottky diodes with breakdown voltages in excess of 60% of the theoretically calculated value. This paper presents the design considerations, the fabrication procedure, and characterization results for these 1 kV Ni-SiC Schottky diodes. Comparison to similarly fabricated Pt-SiC Schottky diodes is reported. The Ni-SiC ohmic contact formation has been studied using Auger electron spectroscopy and X-ray diffraction. The characterization study includes measurements of current-voltage (I0V ) temperature and capacitance-voltage (C0V ) temperature characteristics. The high-temperature performance of these diodes has also been investigated. The diodes show good rectifying behavior with ON/OFF current ratios, ranging from 10 6 to 10 7 at 27 C and in excess of 10 6 up to 300 C.

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Section: Discussionmentioning

confidence: 99%

Section: High-temperature Performancementioning

confidence: 99%

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confidence: 99%

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High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

Saxena

Steckl

1999

IEEE Trans. Electron Devices

193

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“…When the BV exceeds 1000V, the drift resistance starts to be the main limiting factor and the increase in R d is a direct consequence of the increase in drift layer thickness and reduction in drift layer doping. We have also included recent published experimental results (Bhatnagar, et al 1992;Raghunathan, et al 1995;Ueno, et al 1995;Weitzel, et al 1996;Mitlehner, et al 1997;Saxena & Steckl 1997;Sing & Palmour 1997;Wahab, et al 1998; in Fig. 7.10.…”

Section: Schottky Rectifiersmentioning

confidence: 99%

“…As seen in the figure, experimental SiC Schottky rectifiers have achieved significant improvement over Si counterparts, Chow 109 but they are still far from the theoretical predictions. The highest reverse blocking voltage reported so far for a 4H-SiC Schottky rectifier is about 3000 V. Several termination techniques Ueno, et al 1995;Bhatnagar, et al 1993;Alok & Baliga 1997) have tried to maximize the BV and minimize the reverse leakage current.…”

Section: Schottky Rectifiersmentioning

confidence: 99%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

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Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

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Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devices

Itoh

Matsunami

1997

phys. stat. sol. (a)

161

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Schottky contacts of metal/3C‐, 6H‐, and 4H‐SiC systems are investigated in this review. Most Schottky contacts having large barrier heights show good characteristics with low ideality factors. The barrier height depends on the metal work function without strong Fermi‐level pinning for all polytypes, and linear relationships with slopes of about 0.2 to 0.7 are observed between the barrier height and the metal work function. Based on the analysis of metal/SiC systems, the fabrication of high‐voltage rectifiers has been reported, and high voltages from 400 to 1100 V have been achieved using Pt/, Ti/, and Au/6H‐SiC structures. In addition, high‐temperature operation at 400 °C is performed for an Au/6H‐SiC structure while supporting a high reverse bias (460 V). Using Ti/4H‐SiC structures, high‐voltage (≈︂1000 V) and low‐power loss characteristics are realized, which is superior to Ti/6H‐SiC Schottky rectifiers. To improve the reverse bias characteristics, an edge termination technique is employed for Ti/4H‐SiC Schottky rectifiers, and the devices show excellent characteristics with a higher blocking voltage up to 1750 V compared with unterminated devices.

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The guard-ring termination for the high-voltage SiC Schottky barrier diodes

Cited by 44 publications

References 5 publications

High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

High-Temperature Electronics in Europe

Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devices

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