2001
DOI: 10.1088/0953-8984/13/14/308
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The Hall effect and thermoelectric power correlated with the giant magnetoresistance in modified FeRh compounds

Abstract: Simultaneous measurements of the magnetoresistance, magnetization, Hall effect, thermoelectric power and specific heat of a modified FeRh compound where 3.5 at.% Ni is doped at the Fe sites are investigated in order to elucidate the origin of the giant-magnetoresistance phenomena through the metamagnetic transition from the antiferromagnetic (AF) to the ferromagnetic (F) state. The Hall coefficient changes its sign through the metamagnetic transitions. The sign of the thermoelectric power also changes from pos… Show more

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Cited by 23 publications
(23 citation statements)
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“…Suzuki et al [9] suggest that, for deposited thin FeRh films, the main mechanism stems from the spin-dependent scattering of conducting electrons on localized magnetic moments associated with partially occupied electronic dstates [10] at grain boundaries. Kobayashi et al [11] have also discussed the MR effect in the bulk ordered FeRh system attributing its origin to the modification of the Fermi surface across the metamagnetic transition. So far only one theoretical investigation of the MR effect in FeRh has been carried out on an ab-initio level [12].…”
Section: Pacs Numbers: Valid Pacs Appear Herementioning
confidence: 99%
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“…Suzuki et al [9] suggest that, for deposited thin FeRh films, the main mechanism stems from the spin-dependent scattering of conducting electrons on localized magnetic moments associated with partially occupied electronic dstates [10] at grain boundaries. Kobayashi et al [11] have also discussed the MR effect in the bulk ordered FeRh system attributing its origin to the modification of the Fermi surface across the metamagnetic transition. So far only one theoretical investigation of the MR effect in FeRh has been carried out on an ab-initio level [12].…”
Section: Pacs Numbers: Valid Pacs Appear Herementioning
confidence: 99%
“…In this case the GMR effect can be attributed to the spin dependent scattering of conduction electrons which leads to a dependence of the resistivities on the relative orientation of magnetic layers, parallel or antiparallel, assuming the electronic structure of non-magnetic spacer to be unchanged. These arguments, however, cannot be straightforwardly applied to CsCl-structured FeRh, even though it can be pictured as a layered system with one atom thick layers, since the electronic structure of FeRh shows strong modifications across the AFM-FM transition as discussed, for example, by Kobayashi et al [11] to explain the large MR effect in FeRh. We use the calculated density of states at the Fermi level as a measure of the concentration of the conducting electrons.…”
Section: Pacs Numbers: Valid Pacs Appear Herementioning
confidence: 99%
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“…Transport measurements demonstrate a strong drop of the electrical resistivity during the metamagnetic phase transition [16,22] from the AFM to the FM state. As the metamagnetic transition can be manipulated by an external magnetic field, this feature of the resistivity leads to a giant magnetoresistance phenomena in the system around T m , that makes FeRh an appealing material for future data storage devices [13,23].…”
Section: Introductionmentioning
confidence: 99%
“…In this section, S in the patterned wire is characterized through electrical transport measurements. Four-terminal resistance measurement was performed on a 270 nm wide wire with sweeping temperature or in-plane 3 magnetic field as shown in Fig. 2.…”
Section: Experimental Techniquementioning
confidence: 99%