2008
DOI: 10.1109/led.2008.2005534
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The $\hbox{Pd/TiO}_{2}$/ $\hbox{n}$-LTPS Thin-Film Schottky Diode on Glass Substrate for Hydrogen Sensing Applications

Abstract: A Pd/TiO 2 /n-type low-temperature-polysilicon (n-LTPS) MOS thin-film Schottky diode fabricated on a glass substrate for hydrogen sensing is reported. The n-LTPS is an excimer-laser-annealed and PH 3 -gas-plasma-treated amorphoussilicon (a-Si) thin film. At room temperature and −2-V bias, the developed MOS Schottky diode exhibited a high signal ratio of 1540 to 50 ppm of hydrogen gas, with a fast response time of 40 s, respectively. The signal ratio is better or comparable with that of other reported MOS-type … Show more

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Cited by 16 publications
(1 citation statement)
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“…Many hydrogen sensors have already been developed, based on different structures and response mechanisms. [1][2][3] Sensors based on field-effect transistors [4][5][6][7][8][9][10][11][12] and Schottky diodes [13][14][15][16][17] make use of work function changes in catalytic metals such as Pt and Pd, and are operable at room temperature. A semiconducting SnO 2 sensor has also been developed, [18][19][20] and is based on a resistance change caused by the charge carrier exchange between the adsorbed gas and the oxide surface at temperatures greater than 300°C.…”
Section: Introductionmentioning
confidence: 99%
“…Many hydrogen sensors have already been developed, based on different structures and response mechanisms. [1][2][3] Sensors based on field-effect transistors [4][5][6][7][8][9][10][11][12] and Schottky diodes [13][14][15][16][17] make use of work function changes in catalytic metals such as Pt and Pd, and are operable at room temperature. A semiconducting SnO 2 sensor has also been developed, [18][19][20] and is based on a resistance change caused by the charge carrier exchange between the adsorbed gas and the oxide surface at temperatures greater than 300°C.…”
Section: Introductionmentioning
confidence: 99%