The Hidden Potential of Polysilsesquioxane for High‐k: Analysis of the Origin of its Dielectric Nature and Practical Low‐Voltage‐Operating Applications beyond the Unit Device (Adv. Funct. Mater. 7/2022)

Abstract

Logic Devices In article number 2104030, Jihoon Lee, Tae Kyu An, Insik In, Se Hyun Kim, and co‐workers design a fancy strategy for the realization of high‐k polysilsesquioxane materials and apply these materials to low‐voltage operating unit and integrated devices. This work has inspired research towards the further development of practical organic electronics by providing methods for fabricating high‐k dielectrics with various types of polymeric materials.